BR4N70 Specs and Replacement
Type Designator: BR4N70
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 106 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
Package: TO-220
BR4N70 substitution
- MOSFET ⓘ Cross-Reference Search
BR4N70 datasheet
br4n70.pdf
BR4N70 Rev. F Jul.-2018 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , Low thermal resistance, fast switching. / Applications For Electronic transformer, Switch mode power supply. / Eq... See More ⇒
Detailed specifications: MRF5015, MRF5035, 2N7002K1, BR10N60, BR20N50, BR2N7002AK2, BR2N7002LK2, BR40N20, 2N60, BR50N03, BR6N70, BR7N65, BRA10N65, BRA7N65, BRB100N03, BRB10N65, BRB13N50
Keywords - BR4N70 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: IPI084N06L3G
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