BRA10N65 Datasheet and Replacement
Type Designator: BRA10N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 156 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 69 nS
Cossⓘ - Output Capacitance: 166 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO-262
BRA10N65 substitution
BRA10N65 Datasheet (PDF)
bra10n65.pdf

BRA10N65 Rev.B Sep.-2022 DATA SHEET / Descriptions TO-262 N MOS N-CHANNEL MOSFET in a TO-262 Plastic Package. / Features ,,, Low gate charge, low crss, fast switching, HF product. / Applications DC/DC These devices are well
Datasheet: BR20N50 , BR2N7002AK2 , BR2N7002LK2 , BR40N20 , BR4N70 , BR50N03 , BR6N70 , BR7N65 , RU6888R , BRA7N65 , BRB100N03 , BRB10N65 , BRB13N50 , BRB4N60 , BRB70R1K2 , BRB80N08A , BRB840 .
History: SSF13N50 | CEM2192 | SSM6N44FE | UTT6NP10G-S08-R | SIA537EDJ | IPB80N06S2L-H5 | QM2N7002E3K1
Keywords - BRA10N65 MOSFET datasheet
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History: SSF13N50 | CEM2192 | SSM6N44FE | UTT6NP10G-S08-R | SIA537EDJ | IPB80N06S2L-H5 | QM2N7002E3K1



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