BRA10N65 Specs and Replacement

Type Designator: BRA10N65

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 69 nS

Cossⓘ - Output Capacitance: 166 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: TO-262

BRA10N65 substitution

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BRA10N65 datasheet

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BRA10N65

BRA10N65 Rev.B Sep.-2022 DATA SHEET / Descriptions TO-262 N MOS N-CHANNEL MOSFET in a TO-262 Plastic Package. / Features , , , Low gate charge, low crss, fast switching, HF product. / Applications DC/DC These devices are well ... See More ⇒

Detailed specifications: BR20N50, BR2N7002AK2, BR2N7002LK2, BR40N20, BR4N70, BR50N03, BR6N70, BR7N65, AO3400A, BRA7N65, BRB100N03, BRB10N65, BRB13N50, BRB4N60, BRB70R1K2, BRB80N08A, BRB840

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