BRA10N65 Datasheet and Replacement
Type Designator: BRA10N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 156 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 69 nS
Cossⓘ - Output Capacitance: 166 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO-262
BRA10N65 substitution
BRA10N65 Datasheet (PDF)
bra10n65.pdf

BRA10N65 Rev.B Sep.-2022 DATA SHEET / Descriptions TO-262 N MOS N-CHANNEL MOSFET in a TO-262 Plastic Package. / Features ,,, Low gate charge, low crss, fast switching, HF product. / Applications DC/DC These devices are well
Datasheet: BR20N50 , BR2N7002AK2 , BR2N7002LK2 , BR40N20 , BR4N70 , BR50N03 , BR6N70 , BR7N65 , P60NF06 , BRA7N65 , BRB100N03 , BRB10N65 , BRB13N50 , BRB4N60 , BRB70R1K2 , BRB80N08A , BRB840 .
History: FQPF9N08
Keywords - BRA10N65 MOSFET datasheet
BRA10N65 cross reference
BRA10N65 equivalent finder
BRA10N65 lookup
BRA10N65 substitution
BRA10N65 replacement
History: FQPF9N08



LIST
Last Update
MOSFET: AP30N10D | AP30N06Y | AP30N06DF | AP30N06D | AP30N03DF | AP30N02D | AP30H04NF | AP30H04DF | AP30G03GD | AP300N04TLG5 | AP2P15MI | AP2N7002A | AP2N30MI | AP2N20MI | AP280N10MP | AP20G03GD
Popular searches
toshiba c5198 | irf520n datasheet | tip107 | 2n5457 | k3568 | 2sc1344 | cs840f | 2n3053 equivalent