BRB13N50 Specs and Replacement

Type Designator: BRB13N50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 195 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm

Package: TO-263

BRB13N50 substitution

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BRB13N50 datasheet

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BRB13N50

BRB13N50 Rev.A Nov.-2016 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-263Plastic Package. / Features Low gate charge, Low Crss , Fast switching. / Applications AC/DC It is very suit... See More ⇒

Detailed specifications: BR4N70, BR50N03, BR6N70, BR7N65, BRA10N65, BRA7N65, BRB100N03, BRB10N65, 7N60, BRB4N60, BRB70R1K2, BRB80N08A, BRB840, BRCS010N03SZC, BRCS010N04SZC, BRCS015N04SZC, BRCS016N03DP

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