BRB13N50 Datasheet and Replacement
Type Designator: BRB13N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 195 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 180 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
Package: TO-263
BRB13N50 substitution
BRB13N50 Datasheet (PDF)
brb13n50.pdf
BRB13N50 Rev.A Nov.-2016 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-263Plastic Package. / Features Low gate charge, Low Crss , Fast switching. / Applications AC/DC It is very suit
Datasheet: BR4N70 , BR50N03 , BR6N70 , BR7N65 , BRA10N65 , BRA7N65 , BRB100N03 , BRB10N65 , 7N60 , BRB4N60 , BRB70R1K2 , BRB80N08A , BRB840 , BRCS010N03SZC , BRCS010N04SZC , BRCS015N04SZC , BRCS016N03DP .
History: AUIRLU3114Z | FQU9N25TU | BRCS080N02ZB | BRCS080N04SDP | BRB4N60
Keywords - BRB13N50 MOSFET datasheet
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BRB13N50 replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: AUIRLU3114Z | FQU9N25TU | BRCS080N02ZB | BRCS080N04SDP | BRB4N60
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