All MOSFET. BRB4N60 Datasheet

 

BRB4N60 Datasheet and Replacement


   Type Designator: BRB4N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO-263
 

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BRB4N60 Datasheet (PDF)

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BRB4N60

BRB4N60 Rev.D May.-2016 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency

Datasheet: BR50N03 , BR6N70 , BR7N65 , BRA10N65 , BRA7N65 , BRB100N03 , BRB10N65 , BRB13N50 , 60N06 , BRB70R1K2 , BRB80N08A , BRB840 , BRCS010N03SZC , BRCS010N04SZC , BRCS015N04SZC , BRCS016N03DP , BRCS016N03SZC .

History: HTS210C03 | STB6NM60N | BR7N65 | BRA7N65 | NTMD6P02R2 | HTS180P03T | BRB100N03

Keywords - BRB4N60 MOSFET datasheet

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