BRB4N60 Specs and Replacement

Type Designator: BRB4N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO-263

BRB4N60 substitution

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BRB4N60 datasheet

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BRB4N60

BRB4N60 Rev.D May.-2016 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency... See More ⇒

Detailed specifications: BR50N03, BR6N70, BR7N65, BRA10N65, BRA7N65, BRB100N03, BRB10N65, BRB13N50, IRFZ48N, BRB70R1K2, BRB80N08A, BRB840, BRCS010N03SZC, BRCS010N04SZC, BRCS015N04SZC, BRCS016N03DP, BRCS016N03SZC

Keywords - BRB4N60 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.