BRB80N08A Datasheet and Replacement
Type Designator: BRB80N08A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 165 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17.8 nS
Cossⓘ - Output Capacitance: 330 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO-263
BRB80N08A substitution
BRB80N08A Datasheet (PDF)
brb80n08a.pdf

BRB80N08A Rev.C Jun.-2019 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. Halogen-free Product. / Applications DC/DC These devi
brb80n08.pdf

BRB80N08(BRCS80N08B) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for hi
brb80n06.pdf

BRB80N06(BRCS80N06B) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching. / Applications DC/DC
brb80n10.pdf

BRB80N10(BRCS80N10B) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for hi
Datasheet: BR7N65 , BRA10N65 , BRA7N65 , BRB100N03 , BRB10N65 , BRB13N50 , BRB4N60 , BRB70R1K2 , P0903BDG , BRB840 , BRCS010N03SZC , BRCS010N04SZC , BRCS015N04SZC , BRCS016N03DP , BRCS016N03SZC , BRCS016N03ZC , BRCS020N03RA .
History: IXTK180N15 | BRCS016N03SZC | BF245B | CES2317 | IXTK180N15P | STU95N4F3 | CES2321
Keywords - BRB80N08A MOSFET datasheet
BRB80N08A cross reference
BRB80N08A equivalent finder
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BRB80N08A replacement
History: IXTK180N15 | BRCS016N03SZC | BF245B | CES2317 | IXTK180N15P | STU95N4F3 | CES2321



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