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BRB840 Specs and Replacement

Type Designator: BRB840

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

Cossⓘ - Output Capacitance: 150 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: TO-263

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BRB840 datasheet

 ..1. Size:706K  blue-rocket-elect
 brb840.pdf pdf_icon

BRB840

BRB840 Rev.D May.-2016 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficie... See More ⇒

Detailed specifications: BRA10N65 , BRA7N65 , BRB100N03 , BRB10N65 , BRB13N50 , BRB4N60 , BRB70R1K2 , BRB80N08A , IRLB3034 , BRCS010N03SZC , BRCS010N04SZC , BRCS015N04SZC , BRCS016N03DP , BRCS016N03SZC , BRCS016N03ZC , BRCS020N03RA , BRCS020N03ZC .

History: RU20N65R

Keywords - BRB840 MOSFET specs

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