BRCS016N03DP Specs and Replacement

Type Designator: BRCS016N03DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 125 A

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 890 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: TO-252

BRCS016N03DP substitution

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BRCS016N03DP datasheet

 ..1. Size:898K  blue-rocket-elect
brcs016n03dp.pdf pdf_icon

BRCS016N03DP

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 4.1. Size:677K  blue-rocket-elect
brcs016n03szc.pdf pdf_icon

BRCS016N03DP

BRCS016N03SZC Rev.B Mar.-2021 DATA SHEET / Descriptions PDFN5*6 N N-Channel MOSFET in a PDFN5*6 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance;HF... See More ⇒

 4.2. Size:700K  blue-rocket-elect
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BRCS016N03DP

BRCS016N03ZC Rev.A Dec.-2021 DATA SHEET / Descriptions PDFN5 6 N N-Channel MOSFET in a PDFN5 6 Plastic Package . / Features Low RDS(ON) to minimize conductive loss, low Gate Charge for fast switching, Low Thermal resistance, ... See More ⇒

 8.1. Size:1397K  blue-rocket-elect
brcs010n04szc.pdf pdf_icon

BRCS016N03DP

BRCS010N04SZC Rev.B May.-2023 DATA SHEET / Descriptions PDFN5 6 N N-Channel MOSFET in a PDFN5 6 Plastic Package. / Features Low R to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance; DS(ON... See More ⇒

Detailed specifications: BRB13N50, BRB4N60, BRB70R1K2, BRB80N08A, BRB840, BRCS010N03SZC, BRCS010N04SZC, BRCS015N04SZC, K2611, BRCS016N03SZC, BRCS016N03ZC, BRCS020N03RA, BRCS020N03ZC, BRCS020N04BD, BRCS020N04RA, BRCS020N04ZC, BRCS020N06SBD

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