BRCS030N06SBD Datasheet and Replacement
Type Designator: BRCS030N06SBD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 140 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 2160 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
Package: TO-263
BRCS030N06SBD substitution
BRCS030N06SBD Datasheet (PDF)
brcs030n06sbd.pdf

BRCS030N06SBD Rev.A Dec.-2021 DATA SHEET / Descriptions TO-263 N N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features , Ultra Low On-Resistance,fast switching,Halogen-free Product. / Applications PFC
brcs030n06szc.pdf

BRCS030N06SZC Rev.B Feb.-2023 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package . / Features Low R to minimize conductive loss;low Gate Charge for fast switching;Low Thermal DS(ON)resistan
brcs030n03dp.pdf

BRCS030N03DP Rev.A Jul.-2023 ATA SHEET / Descriptions TO-252 N MOS N-Channel Enhancement Mode Field Effect Transistor in a TO-252 Plastic Package. / Features V (V) = 30V I =135 A (V = 20V) DS D GS RDS(ON)@10V3mR(Typ.2.3mR) RDS(ON)@4.5V5mR(Typ.3.1mR) HF Product. / Applications
brcs030n03zc.pdf

BRCS030N03ZC Rev.C Sep.-2022 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance;H
Datasheet: BRCS020N04RA , BRCS020N04ZC , BRCS020N06SBD , BRCS020N06SRA , BRCS025N04DP , BRCS030N03DP , BRCS030N03ZC , BRCS030N04DP , 20N60 , BRCS030N06SZC , BRCS030N10SHBD , BRCS030N10SHRA , BRCS035N03DP , BRCS035N03ZC , BRCS035N04SDP , BRCS035N06SDP , BRCS035N06SZC .
History: IXFT44N50P | STN4NF06L | IXFH15N100P | IRF5M5210 | SM4600CSK | SM4901CSK | SPD30P06PG
Keywords - BRCS030N06SBD MOSFET datasheet
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History: IXFT44N50P | STN4NF06L | IXFH15N100P | IRF5M5210 | SM4600CSK | SM4901CSK | SPD30P06PG



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