BRCS035N03DP Specs and Replacement
Type Designator: BRCS035N03DP
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 88 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 122 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4.2 nS
Cossⓘ - Output Capacitance: 145 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO-252
BRCS035N03DP substitution
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BRCS035N03DP datasheet
brcs035n08shbd.pdf
BRCS035N08SHBD Rev.A Feb.-2023 DATA SHEET / Descriptions TO-263 N N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features , Ultra Low On-Resistance,fast switching, HF Product. / Applications BMS BMS appliances, High power inve... See More ⇒
Detailed specifications: BRCS025N04DP, BRCS030N03DP, BRCS030N03ZC, BRCS030N04DP, BRCS030N06SBD, BRCS030N06SZC, BRCS030N10SHBD, BRCS030N10SHRA, IRFP460, BRCS035N03ZC, BRCS035N04SDP, BRCS035N06SDP, BRCS035N06SZC, BRCS035N08SHBD, BRCS035N08SHRA, BRCS035N08SHZC, BRCS035N10SHBD
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