MTD3055V MOSFET Datasheet: N-Ch, 60V, 12A. Full specification with pinout and replacement list

MTD3055V Specs and Replacement

Type Designator: MTD3055V

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: TO252 DPAK

MTD3055V substitution

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MTD3055V datasheet

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August 1999 MTD3055V* N-Channel Enhancement Mode Field Effect Transistor General Description Features 12 A, 60 V. RDS(ON) = 0.15 @ VGS = 10 V This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters Low gate charge. using either synchronous or conventional switching PWM controllers. Fast switching speed. These MOSFETs ... See More ⇒

..3. Size:455K onsemi
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

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