MTD3055V MOSFET. Datasheet pdf. Equivalent

   Type Designator: MTD3055V
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 12.2 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: TO252 DPAK

MTD3055V Transistor Equivalent Substitute - MOSFET Cross-Reference Search

MTD3055V Datasheet (PDF)

..1. Size:180K motorola
mtd3055v.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD3055V/DDesigner's Data SheetMTD3055VTMOS VMotorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 12 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.15 OHMtance area product about one

..2. Size:238K fairchild semi
mtd3055v.pdf

August 1999MTD3055V*N-Channel Enhancement Mode Field Effect TransistorGeneral Description Features 12 A, 60 V. RDS(ON) = 0.15 @ VGS = 10 VThis N-Channel MOSFET has been designed specificallyto improve the overall efficiency of DC/DC converters Low gate charge.using either synchronous or conventional switchingPWM controllers. Fast switching speed.These MOSFETs

..3. Size:455K onsemi
mtd3055v.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

0.1. Size:206K motorola
mtd3055vrev2a.pdf

0.2. Size:184K motorola
mtd3055vl.pdf

MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTD3055VL/DDesigner's Data SheetMTD3055VLTMOS VMotorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FET NChannel EnhancementMode Silicon Gate 12 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.18 OHMtance area product about o

0.3. Size:209K motorola
mtd3055vlrev2a.pdf