Справочник MOSFET. MTD3055V

 

MTD3055V MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MTD3055V
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 48 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 12.2 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.15 Ohm
   Тип корпуса: TO252 DPAK

 Аналог (замена) для MTD3055V

 

 

MTD3055V Datasheet (PDF)

 ..1. Size:180K  motorola
mtd3055v.pdf

MTD3055V
MTD3055V

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD3055V/DDesigner's Data SheetMTD3055VTMOS VMotorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 12 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.15 OHMtance area product about one

 ..2. Size:238K  fairchild semi
mtd3055v.pdf

MTD3055V
MTD3055V

August 1999MTD3055V*N-Channel Enhancement Mode Field Effect TransistorGeneral Description Features 12 A, 60 V. RDS(ON) = 0.15 @ VGS = 10 VThis N-Channel MOSFET has been designed specificallyto improve the overall efficiency of DC/DC converters Low gate charge.using either synchronous or conventional switchingPWM controllers. Fast switching speed.These MOSFETs

 ..3. Size:455K  onsemi
mtd3055v.pdf

MTD3055V
MTD3055V

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.1. Size:206K  motorola
mtd3055vrev2a.pdf

MTD3055V
MTD3055V

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD3055V/DDesigner's Data SheetMTD3055VTMOS VMotorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 12 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.15 OHMtance area product about one

 0.2. Size:184K  motorola
mtd3055vl.pdf

MTD3055V
MTD3055V

MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTD3055VL/DDesigner's Data SheetMTD3055VLTMOS VMotorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FET NChannel EnhancementMode Silicon Gate 12 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.18 OHMtance area product about o

 0.3. Size:209K  motorola
mtd3055vlrev2a.pdf

MTD3055V
MTD3055V

MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTD3055VL/DDesigner's Data SheetMTD3055VLTMOS VMotorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FET NChannel EnhancementMode Silicon Gate 12 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.18 OHMtance area product about o

 0.4. Size:179K  fairchild semi
mtd3055vl.pdf

MTD3055V
MTD3055V

August 1999DISTRIBUTION GROUP*MTD3055VLN-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral DescriptionFeatures DS(ON) GS

Другие MOSFET... FQD12N20LTMF085 , NDS9952A , FQD12P10TMF085 , FQD13N06 , FQD13N06L , FQD13N10 , NDS8434 , FQD13N10L , RU6888R , FQD16N25C , FQD17N08L , FQD17P06 , FQD18N20V2 , MTD3055VL , FQD19N10 , FQA24N50 , FQD19N10L .

 

 
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