BRCS050N03DP MOSFET. Datasheet pdf. Equivalent
Type Designator: BRCS050N03DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 85 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 100 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 40 nC
trⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 168 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO-252
BRCS050N03DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BRCS050N03DP Datasheet (PDF)
brcs050n03dp.pdf
BRCS050N03DP Rev.B Jul.-2023 DATA SHEET / Descriptions TO-252 N N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow R ,low gate charge, low C , fast switching, HF Product. DS(on) rss / Applications
brcs050n03dsc.pdf
BRCS050N03DSC Rev.A Jul.-2023 DATA SHEET / Descriptions SOP-8 N MOS Double N-CHANNEL MOSFET in a SOP-8 Plastic Package. / Features V (V)=30V I =20A DS DRDS(ON)@10V
brcs050n03zc.pdf
BRCS050N03ZC Rev.B Jul.-2022 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package. / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance;HF
brcs050n03yb.pdf
BRCS050N03YB Rev.A May.-2023 DATA SHEET / Descriptions PDFN33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a PDFN33A-8L Plastic Package. / Features V (V) = 30V DSI =55 A (V = 20V) D GS RDS(ON)@10V5mR(Typ.4.3mR) HF Product. / Applications
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: AOTL66912Q
History: AOTL66912Q
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