BRCS050N03DP Specs and Replacement

Type Designator: BRCS050N03DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 85 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 168 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO-252

BRCS050N03DP substitution

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BRCS050N03DP datasheet

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BRCS050N03DP

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BRCS050N03DP

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BRCS050N03DP

BRCS050N03ZC Rev.B Jul.-2022 DATA SHEET / Descriptions PDFN5 6 N N-Channel MOSFET in a PDFN5 6 Plastic Package. / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance;HF... See More ⇒

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BRCS050N03DP

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Detailed specifications: BRCS035N10SHBD, BRCS035N10SHZC, BRCS040N02DP, BRCS040N03DP, BRCS045N08SHBD, BRCS045N08SHRA, BRCS045N10SHBD, BRCS045N10SHRA, 8205A, BRCS050N03DSC, BRCS050N03YB, BRCS050N03ZC, BRCS050N04BD, BRCS050N04RA, BRCS050N04YB, BRCS050N085HRA, BRCS055N08SHBD

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.