BRCS050N03DSC Specs and Replacement
Type Designator: BRCS050N03DSC
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 168 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: SOP-8
BRCS050N03DSC substitution
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BRCS050N03DSC datasheet
brcs050n03zc.pdf
BRCS050N03ZC Rev.B Jul.-2022 DATA SHEET / Descriptions PDFN5 6 N N-Channel MOSFET in a PDFN5 6 Plastic Package. / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance;HF... See More ⇒
Detailed specifications: BRCS035N10SHZC , BRCS040N02DP , BRCS040N03DP , BRCS045N08SHBD , BRCS045N08SHRA , BRCS045N10SHBD , BRCS045N10SHRA , BRCS050N03DP , 7N65 , BRCS050N03YB , BRCS050N03ZC , BRCS050N04BD , BRCS050N04RA , BRCS050N04YB , BRCS050N085HRA , BRCS055N08SHBD , BRCS055N08SHRA .
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