BRCS050N03ZC
MOSFET. Datasheet pdf. Equivalent
Type Designator: BRCS050N03ZC
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 26
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 32
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 30
nC
trⓘ - Rise Time: 3
nS
Cossⓘ -
Output Capacitance: 280
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006
Ohm
Package:
PDFN5X6
BRCS050N03ZC
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BRCS050N03ZC
Datasheet (PDF)
..1. Size:1115K blue-rocket-elect
brcs050n03zc.pdf 
BRCS050N03ZC Rev.B Jul.-2022 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package. / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance;HF
4.1. Size:1342K blue-rocket-elect
brcs050n03yb.pdf
BRCS050N03YB Rev.A May.-2023 DATA SHEET / Descriptions PDFN33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a PDFN33A-8L Plastic Package. / Features V (V) = 30V DSI =55 A (V = 20V) D GS RDS(ON)@10V5mR(Typ.4.3mR) HF Product. / Applications
4.2. Size:1667K blue-rocket-elect
brcs050n03dsc.pdf
BRCS050N03DSC Rev.A Jul.-2023 DATA SHEET / Descriptions SOP-8 N MOS Double N-CHANNEL MOSFET in a SOP-8 Plastic Package. / Features V (V)=30V I =20A DS DRDS(ON)@10V
4.3. Size:1504K blue-rocket-elect
brcs050n03dp.pdf
BRCS050N03DP Rev.B Jul.-2023 DATA SHEET / Descriptions TO-252 N N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow R ,low gate charge, low C , fast switching, HF Product. DS(on) rss / Applications
Datasheet: WPB4002
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