All MOSFET. BRCS060N03ZC Datasheet

 

BRCS060N03ZC Datasheet and Replacement


   Type Designator: BRCS060N03ZC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 37 nC
   tr ⓘ - Rise Time: 8.6 nS
   Cossⓘ - Output Capacitance: 790 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: PDFN5X6
 

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BRCS060N03ZC Datasheet (PDF)

 ..1. Size:798K  blue-rocket-elect
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BRCS060N03ZC

BRCS060N03ZC Rev.B May.-2021 DATA SHEET / Descriptions PDFN5*6 N N-Channel MOSFET in a PDFN5*6 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance. / Applicat

 3.1. Size:649K  blue-rocket-elect
 brcs060n03zb.pdf pdf_icon

BRCS060N03ZC

BRCS060N03ZB Rev.A Nov.-2020 DATA SHEET / Descriptions DFN 3*3A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN 3*3A-8L Plastic Package. / Features VDS (V) = 30V ID =40 A (VGS = 20V) RDS(ON)@10V6mR(Typ.4.7mR) HF Product. / Applications DC/DC

 4.1. Size:648K  blue-rocket-elect
 brcs060n03yb.pdf pdf_icon

BRCS060N03ZC

BRCS060N03YB Rev.A Aug.-2021 DATA SHEET / Descriptions PDFN 33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a PDFN 33A-8L Plastic Package. / Features VDS (V) = 30V ID =40 A (VGS = 20V) RDS(ON)@10V6mR(Typ.4.7mR) HF Product. / Applications DC/DC

 4.2. Size:1227K  blue-rocket-elect
 brcs060n03dp.pdf pdf_icon

BRCS060N03ZC

BRCS060N03DP Rev.A Jun.-2022 DATA SHEET / Descriptions TO-252 N MOS N-Channel Enhancement Mode Field Effect Transistor in a TO-252 Plastic Package. / Features VDS (V) = 30V ID =67A (VGS = 20V) RDS(ON)@10V6mR HF Product. / Applications DC/DC , DC/DC C

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