BRCS060N03ZC Specs and Replacement
Type Designator: BRCS060N03ZC
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8.6 nS
Cossⓘ - Output Capacitance: 790 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: PDFN5X6
BRCS060N03ZC substitution
- MOSFET ⓘ Cross-Reference Search
BRCS060N03ZC datasheet
brcs060n03zc.pdf
BRCS060N03ZC Rev.B May.-2021 DATA SHEET / Descriptions PDFN5*6 N N-Channel MOSFET in a PDFN5*6 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance. / Applicat... See More ⇒
brcs060n03yb.pdf
BRCS060N03YB Rev.A Aug.-2021 DATA SHEET / Descriptions PDFN 3 3A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a PDFN 3 3A-8L Plastic Package. / Features VDS (V) = 30V ID =40 A (VGS = 20V) RDS(ON)@10V 6mR(Typ.4.7mR) HF Product. / Applications DC/DC ... See More ⇒
brcs060n03dp.pdf
BRCS060N03DP Rev.A Jun.-2022 DATA SHEET / Descriptions TO-252 N MOS N-Channel Enhancement Mode Field Effect Transistor in a TO-252 Plastic Package. / Features VDS (V) = 30V ID =67A (VGS = 20V) RDS(ON)@10V 6mR HF Product. / Applications DC/DC , DC/DC C... See More ⇒
Detailed specifications: BRCS050N04RA, BRCS050N04YB, BRCS050N085HRA, BRCS055N08SHBD, BRCS055N08SHRA, BRCS060N03DP, BRCS060N03YB, BRCS060N03ZB, K3569, BRCS060N04DP, BRCS060N04SZC, BRCS060N04YM, BRCS060N08HZC, BRCS060N15SHRA, BRCS065N08SHBD, BRCS065N08SHRA, BRCS065N08SHZC
Keywords - BRCS060N03ZC MOSFET specs
BRCS060N03ZC cross reference
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