BRCS060N04DP Datasheet and Replacement
Type Designator: BRCS060N04DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 2.1 nS
Cossⓘ - Output Capacitance: 265 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO-252
BRCS060N04DP substitution
BRCS060N04DP Datasheet (PDF)
brcs060n04dp.pdf
BRCS060N04DP Rev.A Aug.-2023 DATA SHEET / Descriptions TO-252 N N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features VDS(V)=40V ID=70A RDS(ON)@10V
brcs060n04szc.pdf
BRCS060N04SZC Rev.C Jul.-2022 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package . / Features Low R to minimize conductive loss;low Gate Charge for fast switching;Low Thermal DS(ON)resistan
brcs060n04ym.pdf
BRCS060N04YM Rev.D Mar.-2023 DATA SHEET / Descriptions PDFN56A N Dual N-CHANNEL MOSFET in a PDFN56A Plastic Package. / Features Dual N-Ch VDS(V)=40V ID=60.2A RDS(ON)
brcs060n03zc.pdf
BRCS060N03ZC Rev.B May.-2021 DATA SHEET / Descriptions PDFN5*6 N N-Channel MOSFET in a PDFN5*6 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance. / Applicat
Datasheet: BRCS050N04YB , BRCS050N085HRA , BRCS055N08SHBD , BRCS055N08SHRA , BRCS060N03DP , BRCS060N03YB , BRCS060N03ZB , BRCS060N03ZC , IRFP260 , BRCS060N04SZC , BRCS060N04YM , BRCS060N08HZC , BRCS060N15SHRA , BRCS065N08SHBD , BRCS065N08SHRA , BRCS065N08SHZC , BRCS070N03DP .
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