BRCS060N04DP Specs and Replacement

Type Designator: BRCS060N04DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.1 nS

Cossⓘ - Output Capacitance: 265 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO-252

BRCS060N04DP substitution

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BRCS060N04DP datasheet

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 brcs060n04dp.pdf pdf_icon

BRCS060N04DP

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 brcs060n04szc.pdf pdf_icon

BRCS060N04DP

BRCS060N04SZC Rev.C Jul.-2022 DATA SHEET / Descriptions PDFN5 6 N N-Channel MOSFET in a PDFN5 6 Plastic Package . / Features Low R to minimize conductive loss;low Gate Charge for fast switching;Low Thermal DS(ON) resistan... See More ⇒

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 brcs060n04ym.pdf pdf_icon

BRCS060N04DP

BRCS060N04YM Rev.D Mar.-2023 DATA SHEET / Descriptions PDFN5 6A N Dual N-CHANNEL MOSFET in a PDFN5 6A Plastic Package. / Features Dual N-Ch VDS(V)=40V ID=60.2A RDS(ON)... See More ⇒

 5.1. Size:798K  blue-rocket-elect
 brcs060n03zc.pdf pdf_icon

BRCS060N04DP

BRCS060N03ZC Rev.B May.-2021 DATA SHEET / Descriptions PDFN5*6 N N-Channel MOSFET in a PDFN5*6 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance. / Applicat... See More ⇒

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Detailed specifications: BRCS050N04YB, BRCS050N085HRA, BRCS055N08SHBD, BRCS055N08SHRA, BRCS060N03DP, BRCS060N03YB, BRCS060N03ZB, BRCS060N03ZC, IRFP260, BRCS060N04SZC, BRCS060N04YM, BRCS060N08HZC, BRCS060N15SHRA, BRCS065N08SHBD, BRCS065N08SHRA, BRCS065N08SHZC, BRCS070N03DP

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