BRCS060N08HZC Datasheet and Replacement
Type Designator: BRCS060N08HZC
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 85 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 1380 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: PDFN5X6
BRCS060N08HZC substitution
BRCS060N08HZC Datasheet (PDF)
brcs060n08hzc.pdf

BRCS060N08HZC Rev.A Jun.-2021 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package . / Features Low RDS(ON) to minimize conductive loss, low Gate Charge for fast switching, Low Thermal resistance,
brcs060n03zc.pdf

BRCS060N03ZC Rev.B May.-2021 DATA SHEET / Descriptions PDFN5*6 N N-Channel MOSFET in a PDFN5*6 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance. / Applicat
brcs060n03yb.pdf

BRCS060N03YB Rev.A Aug.-2021 DATA SHEET / Descriptions PDFN 33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a PDFN 33A-8L Plastic Package. / Features VDS (V) = 30V ID =40 A (VGS = 20V) RDS(ON)@10V6mR(Typ.4.7mR) HF Product. / Applications DC/DC
brcs060n04szc.pdf

BRCS060N04SZC Rev.C Jul.-2022 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package . / Features Low R to minimize conductive loss;low Gate Charge for fast switching;Low Thermal DS(ON)resistan
Datasheet: BRCS055N08SHRA , BRCS060N03DP , BRCS060N03YB , BRCS060N03ZB , BRCS060N03ZC , BRCS060N04DP , BRCS060N04SZC , BRCS060N04YM , IRF9540N , BRCS060N15SHRA , BRCS065N08SHBD , BRCS065N08SHRA , BRCS065N08SHZC , BRCS070N03DP , BRCS070N03DSC , BRCS070N08SRA , BRCS070N08SZC .
History: 2N80G-TF3-T
Keywords - BRCS060N08HZC MOSFET datasheet
BRCS060N08HZC cross reference
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History: 2N80G-TF3-T



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