BRCS060N08HZC Datasheet and Replacement
Type Designator: BRCS060N08HZC
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 85 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 36.5 nC
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 1380 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: PDFN5X6
BRCS060N08HZC substitution
BRCS060N08HZC Datasheet (PDF)
brcs060n08hzc.pdf

BRCS060N08HZC Rev.A Jun.-2021 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package . / Features Low RDS(ON) to minimize conductive loss, low Gate Charge for fast switching, Low Thermal resistance,
brcs060n03zc.pdf

BRCS060N03ZC Rev.B May.-2021 DATA SHEET / Descriptions PDFN5*6 N N-Channel MOSFET in a PDFN5*6 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance. / Applicat
brcs060n03yb.pdf

BRCS060N03YB Rev.A Aug.-2021 DATA SHEET / Descriptions PDFN 33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a PDFN 33A-8L Plastic Package. / Features VDS (V) = 30V ID =40 A (VGS = 20V) RDS(ON)@10V6mR(Typ.4.7mR) HF Product. / Applications DC/DC
brcs060n04szc.pdf

BRCS060N04SZC Rev.C Jul.-2022 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package . / Features Low R to minimize conductive loss;low Gate Charge for fast switching;Low Thermal DS(ON)resistan
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: CHM3032JGP
Keywords - BRCS060N08HZC MOSFET datasheet
BRCS060N08HZC cross reference
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History: CHM3032JGP



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