BRCS060N08HZC
MOSFET. Datasheet pdf. Equivalent
Type Designator: BRCS060N08HZC
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 83
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 85
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 36.5
nC
trⓘ - Rise Time: 5
nS
Cossⓘ -
Output Capacitance: 1380
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065
Ohm
Package:
PDFN5X6
BRCS060N08HZC
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BRCS060N08HZC
Datasheet (PDF)
..1. Size:1297K blue-rocket-elect
brcs060n08hzc.pdf 
BRCS060N08HZC Rev.A Jun.-2021 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package . / Features Low RDS(ON) to minimize conductive loss, low Gate Charge for fast switching, Low Thermal resistance,
5.1. Size:798K blue-rocket-elect
brcs060n03zc.pdf
BRCS060N03ZC Rev.B May.-2021 DATA SHEET / Descriptions PDFN5*6 N N-Channel MOSFET in a PDFN5*6 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance. / Applicat
5.2. Size:648K blue-rocket-elect
brcs060n03yb.pdf
BRCS060N03YB Rev.A Aug.-2021 DATA SHEET / Descriptions PDFN 33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a PDFN 33A-8L Plastic Package. / Features VDS (V) = 30V ID =40 A (VGS = 20V) RDS(ON)@10V6mR(Typ.4.7mR) HF Product. / Applications DC/DC
5.3. Size:1822K blue-rocket-elect
brcs060n04szc.pdf
BRCS060N04SZC Rev.C Jul.-2022 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package . / Features Low R to minimize conductive loss;low Gate Charge for fast switching;Low Thermal DS(ON)resistan
5.4. Size:1227K blue-rocket-elect
brcs060n03dp.pdf
BRCS060N03DP Rev.A Jun.-2022 DATA SHEET / Descriptions TO-252 N MOS N-Channel Enhancement Mode Field Effect Transistor in a TO-252 Plastic Package. / Features VDS (V) = 30V ID =67A (VGS = 20V) RDS(ON)@10V6mR HF Product. / Applications DC/DC , DC/DC C
5.5. Size:649K blue-rocket-elect
brcs060n03zb.pdf
BRCS060N03ZB Rev.A Nov.-2020 DATA SHEET / Descriptions DFN 3*3A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN 3*3A-8L Plastic Package. / Features VDS (V) = 30V ID =40 A (VGS = 20V) RDS(ON)@10V6mR(Typ.4.7mR) HF Product. / Applications DC/DC
5.6. Size:1746K blue-rocket-elect
brcs060n04ym.pdf
BRCS060N04YM Rev.D Mar.-2023 DATA SHEET / Descriptions PDFN56A N Dual N-CHANNEL MOSFET in a PDFN56A Plastic Package. / Features Dual N-Ch VDS(V)=40V ID=60.2A RDS(ON)
5.7. Size:1727K blue-rocket-elect
brcs060n04dp.pdf
BRCS060N04DP Rev.A Aug.-2023 DATA SHEET / Descriptions TO-252 N N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features VDS(V)=40V ID=70A RDS(ON)@10V
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