BRCS070N10SZC MOSFET. Datasheet pdf. Equivalent
Type Designator: BRCS070N10SZC
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 113.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 90 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 65 nC
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 1000 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: PDFN5X6
BRCS070N10SZC Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BRCS070N10SZC Datasheet (PDF)
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