BRCS070N10SZC Specs and Replacement
Type Designator: BRCS070N10SZC
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 113.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 1000 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: PDFN5X6
BRCS070N10SZC substitution
- MOSFET ⓘ Cross-Reference Search
BRCS070N10SZC datasheet
brcs070n10szc.pdf
BRCS070N10SZC Rev.A Jun.-2022 DATA SHEET / Descriptions PDFN5 6 N N-Channel MOSFET in a PDFN5 6 Plastic Package. / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance; ... See More ⇒
brcs070n08szc.pdf
BRCS070N08SZC Rev.A May.-2022 DATA SHEET / Descriptions PDFN5 6 N N-Channel MOSFET in a PDFN5 6 Plastic Package. / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance;H... See More ⇒
Detailed specifications: BRCS060N15SHRA, BRCS065N08SHBD, BRCS065N08SHRA, BRCS065N08SHZC, BRCS070N03DP, BRCS070N03DSC, BRCS070N08SRA, BRCS070N08SZC, IRF530, BRCS070P03DP, BRCS070P03YB, BRCS070P03YM, BRCS080C03SC, BRCS080C03YA, BRCS080C03YM, BRCS080C04SC, BRCS080N02RA
Keywords - BRCS070N10SZC MOSFET specs
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