BRCS070N10SZC
MOSFET. Datasheet pdf. Equivalent
Type Designator: BRCS070N10SZC
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 113.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 90
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 65
nC
trⓘ - Rise Time: 6
nS
Cossⓘ -
Output Capacitance: 1000
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007
Ohm
Package:
PDFN5X6
BRCS070N10SZC
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BRCS070N10SZC
Datasheet (PDF)
..1. Size:1408K blue-rocket-elect
brcs070n10szc.pdf
BRCS070N10SZC Rev.A Jun.-2022 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package. / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance;
6.1. Size:1249K blue-rocket-elect
brcs070n08szc.pdf
BRCS070N08SZC Rev.A May.-2022 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package. / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance;H
6.2. Size:1674K blue-rocket-elect
brcs070n03dsc.pdf
BRCS070N03DSC Rev.A Jul.-2023 DATA SHEET / Descriptions SOP-8 N MOS Double N-CHANNEL MOSFET in a SOP-8 Plastic Package. / Features V (V)=30V I =16.5A DS DRDS(ON)@10V
6.3. Size:1464K blue-rocket-elect
brcs070n03dp.pdf
BRCS070N03DP Rev.A Mar.-2023 DATA SHEET / Descriptions TO-252 N N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow R ,low gate charge, low C , fast switching, HF Product. DS(on) rss / Applications
6.4. Size:1256K blue-rocket-elect
brcs070n08sra.pdf
BRCS070N08SRA Rev.A Dec.-2021 DATA SHEET / Descriptions TO-220 N N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , Ultra Low On-Resistance, fast switching. / Applications PFC These
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