BRCS080C03YM Specs and Replacement
Type Designator: BRCS080C03YM
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 12.5 W
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: PDFN5X6A
BRCS080C03YM substitution
- MOSFET ⓘ Cross-Reference Search
BRCS080C03YM datasheet
brcs080c03ym.pdf
BRCS080C03YM Rev.B Feb.-2023 DATA SHEET / Descriptions PDFN5 6A MOS Complementary Enhancement MOSFET in a PDFN5 6A Plastic Package. / Features N-channel P-channel VDS(V)=30V VDS(V)=-30V ID=24A ID=-24A RDS(ON)... See More ⇒
brcs080c03ya.pdf
BRCS080C03YA Rev.A Sep.-2023 DATA SHEET / Descriptions PDFN3 3-8L Complementary Enhancement MOSFET in a PDFN3 3-8L Plastic Package. / Features N-channel P-channel V (V)=30V I =37A V (V)=-30V I =-26A DS D DS D R DS(ON)@-10V... See More ⇒
brcs080c03sc.pdf
BRCS080C03SC Rev.A Aug.-2023 DATA SHEET / Descriptions SOP-8 Complementary Enhancement MOSFET in a SOP-8 Plastic Package. / Features N-channel P-channel V (V)=30V I =15.5A V (V)=-30V I =-11.5A DS D DS D R DS(ON)@-10V... See More ⇒
brcs080c04sc.pdf
BRCS080C04SC Rev.B Aug.-2023 DATA SHEET / Descriptions SOP-8 Complementary Enhancement MOSFET in a SOP-8 Plastic Package. / Features N-channel P-channel V (V)=40V I =15A V (V)=-40V I =-11A DS D DS D R DS(ON)@-10V... See More ⇒
Detailed specifications: BRCS070N08SRA, BRCS070N08SZC, BRCS070N10SZC, BRCS070P03DP, BRCS070P03YB, BRCS070P03YM, BRCS080C03SC, BRCS080C03YA, TK10A60D, BRCS080C04SC, BRCS080N02RA, BRCS080N02ZB, BRCS080N02ZJ, BRCS080N03DSC, BRCS080N03YB, BRCS080N04SC, BRCS080N04SDP
Keywords - BRCS080C03YM MOSFET specs
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BRCS080C03YM replacement
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