BRCS080C03YM
MOSFET. Datasheet pdf. Equivalent
Type Designator: BRCS080C03YM
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 12.5
W
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 24
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 14
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 100
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015
Ohm
Package: PDFN5X6A
BRCS080C03YM
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BRCS080C03YM
Datasheet (PDF)
..1. Size:1813K blue-rocket-elect
brcs080c03ym.pdf 
BRCS080C03YM Rev.B Feb.-2023 DATA SHEET / Descriptions PDFN56A MOS Complementary Enhancement MOSFET in a PDFN56A Plastic Package. / Features N-channel P-channel VDS(V)=30V VDS(V)=-30V ID=24A ID=-24A RDS(ON)
3.1. Size:3030K blue-rocket-elect
brcs080c03ya.pdf
BRCS080C03YA Rev.A Sep.-2023 DATA SHEET / Descriptions PDFN33-8L Complementary Enhancement MOSFET in a PDFN33-8L Plastic Package. / Features N-channel P-channel V (V)=30V I =37A V (V)=-30V I =-26A DS D DS DR DS(ON)@-10V
4.1. Size:3320K blue-rocket-elect
brcs080c03sc.pdf
BRCS080C03SC Rev.A Aug.-2023 DATA SHEET / Descriptions SOP-8 Complementary Enhancement MOSFET in a SOP-8 Plastic Package. / Features N-channel P-channel V (V)=30V I =15.5A V (V)=-30V I =-11.5A DS D DS DR DS(ON)@-10V
5.1. Size:3108K blue-rocket-elect
brcs080c04sc.pdf
BRCS080C04SC Rev.B Aug.-2023 DATA SHEET / Descriptions SOP-8 Complementary Enhancement MOSFET in a SOP-8 Plastic Package. / Features N-channel P-channel V (V)=40V I =15A V (V)=-40V I =-11A DS D DS DR DS(ON)@-10V
Datasheet: WPB4002
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