BRCS080N03DSC MOSFET Datasheet: N-Ch, 30V, 16A. Full specification with pinout and replacement list

BRCS080N03DSC Specs and Replacement

Type Designator: BRCS080N03DSC

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: SOP-8

BRCS080N03DSC substitution

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BRCS080N03DSC datasheet

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BRCS080N03YB Rev.A Mar.-2022 DATA SHEET / Descriptions PDFN 3 3A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a PDFN 3 3A-8L Plastic Package. / Features VDS (V) = 30V ID =30 A (VGS = 20V) RDS(ON)@10V 9mR(Typ.8mR) HF Product. / Applications DC/DC ... See More ⇒

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brcs080n04sc.pdf pdf_icon

BRCS080N04SC Rev.A Jun.-2022 DATA SHEET / Descriptions SOP-8 N N-Channel Enhancement Mode Field Effect Transistor in a SOP-8 Plastic Package. / Features VDS = 40V ID =15A (VGS = 20V) RDS(ON)@10V 8mR(Typ.6.4mR) HF Product. / Applications ... See More ⇒

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brcs080n04sdp.pdf pdf_icon

BRCS080N04SDP Rev.A Sep.-2022 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features V (V) = 40V DS I =54A (V = 20V) D GS R DS(ON)@10V 8mR(Typ.7.5mR) HF Product. / Applications DC/DC These devices are well suite... See More ⇒