BRCS080N03DSC MOSFET. Datasheet pdf. Equivalent

   Type Designator: BRCS080N03DSC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 40 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: SOP-8

BRCS080N03DSC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BRCS080N03DSC Datasheet (PDF)

..1. Size:1674K blue-rocket-elect
brcs080n03dsc.pdf

BRCS080N03DSC Rev.A Aug.-2023 DATA SHEET / Descriptions SOP-8 N MOS Double N-CHANNEL MOSFET in a SOP-8 Plastic Package. / Features V (V)=30V I =16A DS DRDS(ON)@10V

4.1. Size:1829K blue-rocket-elect
brcs080n03yb.pdf

BRCS080N03YB Rev.A Mar.-2022 DATA SHEET / Descriptions PDFN33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a PDFN 33A-8L Plastic Package. / Features VDS (V) = 30V ID =30 A (VGS = 20V) RDS(ON)@10V9mR(Typ.8mR) HFProduct. / Applications DC/DC

5.1. Size:1268K blue-rocket-elect
brcs080n04sc.pdf

BRCS080N04SC Rev.A Jun.-2022 DATA SHEET / Descriptions SOP-8 N N-Channel Enhancement Mode Field Effect Transistor in a SOP-8 Plastic Package. / Features VDS = 40V ID =15A (VGS = 20V) RDS(ON)@10V8mR(Typ.6.4mR) HF Product. / Applications

5.2. Size:1705K blue-rocket-elect
brcs080n04sdp.pdf

BRCS080N04SDP Rev.A Sep.-2022 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features V (V) = 40V DSI =54A (V = 20V) D GS RDS(ON)@10V8mR(Typ.7.5mR) HF Product. / Applications DC/DC These devices are well suite

5.3. Size:633K blue-rocket-elect
brcs080n02zj.pdf

BRCS080N02ZJ Rev.C Dec.-2021 DATA SHEET / Descriptions DFN 2*2B-6L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN 2*2B-6L Plastic Package. / Features VDS (V) = 20V ID = 8A (VGS = 12V) HF Product. / Applications DC/DC

5.4. Size:2660K blue-rocket-elect
brcs080n02ra.pdf

BRCS080N02RA Rev.A Feb.-2023 DATA SHEET / Descriptions TO-220 N N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , Ultra Low On-Resistance,fast switching. / Applications Power switching application,Load switching,Uninterruptible po

5.5. Size:1369K blue-rocket-elect
brcs080n04zc.pdf

BRCS080N04ZC Rev.A Jun.-2022 DATA SHEET / Descriptions PDFN 56 N N-Channel MOSFET in a PDFN 56 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance;

5.6. Size:2391K blue-rocket-elect
brcs080n04yb.pdf

BRCS080N04YB Rev.A Jun.-2022 DATA SHEET / Descriptions PDFN33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a PDFN 33A-8L Plastic Package. / Features VDS (V) = 40V ID =45 A (VGS = 20V) RDS(ON)@10V8mR(Typ.6.4mR) HFProduct. / Applications DC/DC

5.7. Size:1294K blue-rocket-elect
brcs080n02zb.pdf

BRCS080N02ZB Rev.C Dec.-2023 DATA SHEET / Descriptions DFN33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN33A-8L Plastic Package. / Features V (V) = 20V I = 43A (V =12V) DS D GS RDS(ON)@10V10mR(Typ.8.0mR) RDS(ON)@4.5V11mR(Typ.9.5mR) RDS(ON)@2.5V16mR(Typ.14mR) HF Pr

5.8. Size:1194K blue-rocket-elect
brcs080n04zb.pdf

BRCS080N04ZB Rev.A May.-2022 DATA SHEET / Descriptions DFN33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN33A-8L Plastic Package. / Features VDS (V) = 40V ID = 40A (VGS = 20V) HF Product. / Applications DC/DC

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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BRCS080N03DSC MOSFET. Datasheet pdf. Equivalent

BRCS080N03DSC Datasheet (PDF)

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