BRCS080N03DSC Datasheet and Replacement
Type Designator: BRCS080N03DSC
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: SOP-8
BRCS080N03DSC substitution
BRCS080N03DSC Datasheet (PDF)
brcs080n03dsc.pdf
BRCS080N03DSC Rev.A Aug.-2023 DATA SHEET / Descriptions SOP-8 N MOS Double N-CHANNEL MOSFET in a SOP-8 Plastic Package. / Features V (V)=30V I =16A DS DRDS(ON)@10V
brcs080n03yb.pdf
BRCS080N03YB Rev.A Mar.-2022 DATA SHEET / Descriptions PDFN33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a PDFN 33A-8L Plastic Package. / Features VDS (V) = 30V ID =30 A (VGS = 20V) RDS(ON)@10V9mR(Typ.8mR) HFProduct. / Applications DC/DC
brcs080n04sc.pdf
BRCS080N04SC Rev.A Jun.-2022 DATA SHEET / Descriptions SOP-8 N N-Channel Enhancement Mode Field Effect Transistor in a SOP-8 Plastic Package. / Features VDS = 40V ID =15A (VGS = 20V) RDS(ON)@10V8mR(Typ.6.4mR) HF Product. / Applications
brcs080n04sdp.pdf
BRCS080N04SDP Rev.A Sep.-2022 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features V (V) = 40V DSI =54A (V = 20V) D GS RDS(ON)@10V8mR(Typ.7.5mR) HF Product. / Applications DC/DC These devices are well suite
Datasheet: BRCS070P03YM , BRCS080C03SC , BRCS080C03YA , BRCS080C03YM , BRCS080C04SC , BRCS080N02RA , BRCS080N02ZB , BRCS080N02ZJ , IRF1407 , BRCS080N03YB , BRCS080N04SC , BRCS080N04SDP , BRCS080N04YB , BRCS080N04ZB , BRCS080N04ZC , BRCS080N10SHBD , BRCS080N10SHDP .
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