BRCS080N03YB Datasheet and Replacement
Type Designator: BRCS080N03YB
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 20.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 2.5 nS
Cossⓘ - Output Capacitance: 135 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: PDFN3X3A-8L
BRCS080N03YB substitution
BRCS080N03YB Datasheet (PDF)
brcs080n03yb.pdf

BRCS080N03YB Rev.A Mar.-2022 DATA SHEET / Descriptions PDFN33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a PDFN 33A-8L Plastic Package. / Features VDS (V) = 30V ID =30 A (VGS = 20V) RDS(ON)@10V9mR(Typ.8mR) HFProduct. / Applications DC/DC
brcs080n03dsc.pdf

BRCS080N03DSC Rev.A Aug.-2023 DATA SHEET / Descriptions SOP-8 N MOS Double N-CHANNEL MOSFET in a SOP-8 Plastic Package. / Features V (V)=30V I =16A DS DRDS(ON)@10V
brcs080n04sc.pdf

BRCS080N04SC Rev.A Jun.-2022 DATA SHEET / Descriptions SOP-8 N N-Channel Enhancement Mode Field Effect Transistor in a SOP-8 Plastic Package. / Features VDS = 40V ID =15A (VGS = 20V) RDS(ON)@10V8mR(Typ.6.4mR) HF Product. / Applications
brcs080n04sdp.pdf

BRCS080N04SDP Rev.A Sep.-2022 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features V (V) = 40V DSI =54A (V = 20V) D GS RDS(ON)@10V8mR(Typ.7.5mR) HF Product. / Applications DC/DC These devices are well suite
Datasheet: BRCS080C03SC , BRCS080C03YA , BRCS080C03YM , BRCS080C04SC , BRCS080N02RA , BRCS080N02ZB , BRCS080N02ZJ , BRCS080N03DSC , 5N65 , BRCS080N04SC , BRCS080N04SDP , BRCS080N04YB , BRCS080N04ZB , BRCS080N04ZC , BRCS080N10SHBD , BRCS080N10SHDP , BRCS080N10SHRA .
History: 2SK1215F | TPB50R250C
Keywords - BRCS080N03YB MOSFET datasheet
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History: 2SK1215F | TPB50R250C



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