BRCS080N03YB Specs and Replacement

Type Designator: BRCS080N03YB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.5 nS

Cossⓘ - Output Capacitance: 135 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: PDFN3X3A-8L

BRCS080N03YB substitution

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BRCS080N03YB datasheet

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 brcs080n03yb.pdf pdf_icon

BRCS080N03YB

BRCS080N03YB Rev.A Mar.-2022 DATA SHEET / Descriptions PDFN 3 3A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a PDFN 3 3A-8L Plastic Package. / Features VDS (V) = 30V ID =30 A (VGS = 20V) RDS(ON)@10V 9mR(Typ.8mR) HF Product. / Applications DC/DC ... See More ⇒

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 brcs080n03dsc.pdf pdf_icon

BRCS080N03YB

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 brcs080n04sc.pdf pdf_icon

BRCS080N03YB

BRCS080N04SC Rev.A Jun.-2022 DATA SHEET / Descriptions SOP-8 N N-Channel Enhancement Mode Field Effect Transistor in a SOP-8 Plastic Package. / Features VDS = 40V ID =15A (VGS = 20V) RDS(ON)@10V 8mR(Typ.6.4mR) HF Product. / Applications ... See More ⇒

 5.2. Size:1705K  blue-rocket-elect
 brcs080n04sdp.pdf pdf_icon

BRCS080N03YB

BRCS080N04SDP Rev.A Sep.-2022 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features V (V) = 40V DS I =54A (V = 20V) D GS R DS(ON)@10V 8mR(Typ.7.5mR) HF Product. / Applications DC/DC These devices are well suite... See More ⇒

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Detailed specifications: BRCS080C03SC, BRCS080C03YA, BRCS080C03YM, BRCS080C04SC, BRCS080N02RA, BRCS080N02ZB, BRCS080N02ZJ, BRCS080N03DSC, 2SK3568, BRCS080N04SC, BRCS080N04SDP, BRCS080N04YB, BRCS080N04ZB, BRCS080N04ZC, BRCS080N10SHBD, BRCS080N10SHDP, BRCS080N10SHRA

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