BRCS080N04YB Specs and Replacement
Type Designator: BRCS080N04YB
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 27 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.1 nS
Cossⓘ - Output Capacitance: 115 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: PDFN3X3A-8L
BRCS080N04YB substitution
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BRCS080N04YB datasheet
brcs080n04sc.pdf
BRCS080N04SC Rev.A Jun.-2022 DATA SHEET / Descriptions SOP-8 N N-Channel Enhancement Mode Field Effect Transistor in a SOP-8 Plastic Package. / Features VDS = 40V ID =15A (VGS = 20V) RDS(ON)@10V 8mR(Typ.6.4mR) HF Product. / Applications ... See More ⇒
brcs080n04sdp.pdf
BRCS080N04SDP Rev.A Sep.-2022 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features V (V) = 40V DS I =54A (V = 20V) D GS R DS(ON)@10V 8mR(Typ.7.5mR) HF Product. / Applications DC/DC These devices are well suite... See More ⇒
brcs080n04zc.pdf
BRCS080N04ZC Rev.A Jun.-2022 DATA SHEET / Descriptions PDFN 5 6 N N-Channel MOSFET in a PDFN 5 6 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance; ... See More ⇒
Detailed specifications: BRCS080C04SC, BRCS080N02RA, BRCS080N02ZB, BRCS080N02ZJ, BRCS080N03DSC, BRCS080N03YB, BRCS080N04SC, BRCS080N04SDP, RFP50N06, BRCS080N04ZB, BRCS080N04ZC, BRCS080N10SHBD, BRCS080N10SHDP, BRCS080N10SHRA, BRCS080N10SHZC, BRCS100N03BD, BRCS100N06BD
Keywords - BRCS080N04YB MOSFET specs
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