BRCS080N04YB Datasheet and Replacement
Type Designator: BRCS080N04YB
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 27 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 2.1 nS
Cossⓘ - Output Capacitance: 115 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: PDFN3X3A-8L
BRCS080N04YB substitution
BRCS080N04YB Datasheet (PDF)
brcs080n04yb.pdf

BRCS080N04YB Rev.A Jun.-2022 DATA SHEET / Descriptions PDFN33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a PDFN 33A-8L Plastic Package. / Features VDS (V) = 40V ID =45 A (VGS = 20V) RDS(ON)@10V8mR(Typ.6.4mR) HFProduct. / Applications DC/DC
brcs080n04sc.pdf

BRCS080N04SC Rev.A Jun.-2022 DATA SHEET / Descriptions SOP-8 N N-Channel Enhancement Mode Field Effect Transistor in a SOP-8 Plastic Package. / Features VDS = 40V ID =15A (VGS = 20V) RDS(ON)@10V8mR(Typ.6.4mR) HF Product. / Applications
brcs080n04sdp.pdf

BRCS080N04SDP Rev.A Sep.-2022 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features V (V) = 40V DSI =54A (V = 20V) D GS RDS(ON)@10V8mR(Typ.7.5mR) HF Product. / Applications DC/DC These devices are well suite
brcs080n04zc.pdf

BRCS080N04ZC Rev.A Jun.-2022 DATA SHEET / Descriptions PDFN 56 N N-Channel MOSFET in a PDFN 56 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance;
Datasheet: BRCS080C04SC , BRCS080N02RA , BRCS080N02ZB , BRCS080N02ZJ , BRCS080N03DSC , BRCS080N03YB , BRCS080N04SC , BRCS080N04SDP , SKD502T , BRCS080N04ZB , BRCS080N04ZC , BRCS080N10SHBD , BRCS080N10SHDP , BRCS080N10SHRA , BRCS080N10SHZC , BRCS100N03BD , BRCS100N06BD .
History: 13N50MF | 17P10L-TF2-T
Keywords - BRCS080N04YB MOSFET datasheet
BRCS080N04YB cross reference
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History: 13N50MF | 17P10L-TF2-T



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