BRCS080N10SHBD Datasheet and Replacement
Type Designator: BRCS080N10SHBD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 73 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8.5 nS
Cossⓘ - Output Capacitance: 1180 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO-263
BRCS080N10SHBD substitution
BRCS080N10SHBD Datasheet (PDF)
brcs080n10shbd.pdf

BRCS080N10SHBD Rev.A Sep.-2022 DATA SHEET / Descriptions TO-263 N N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features ,, Ultra Low On-Resistance,fast switching,HF product. / Applications PFC
brcs080n10shzc.pdf

BRCS080N10SHZC Rev.A Sep.-2021 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package . / Features Low RDS(ON) to minimize conductive loss, low Gate Charge for fast switching, Low Thermal resistance
brcs080n10shdp.pdf

BRCS080N10SHDP Rev.A Jul.-2022 DATA SHEET / Descriptions TO-252 N N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching, HF Product. / Applications DC
brcs080n10shra.pdf

BRCS080N10SHRA Rev.B Sep.-2022 DATA SHEET / Descriptions TO-220 N N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , Ultra Low On-Resistance,fast switching. / Applications PFC . These de
Datasheet: BRCS080N02ZJ , BRCS080N03DSC , BRCS080N03YB , BRCS080N04SC , BRCS080N04SDP , BRCS080N04YB , BRCS080N04ZB , BRCS080N04ZC , 75N75 , BRCS080N10SHDP , BRCS080N10SHRA , BRCS080N10SHZC , BRCS100N03BD , BRCS100N06BD , BRCS100N06DP , BRCS100N06RA , BRCS100N10SHZC .
History: CEM9436A | IXFT23N80Q | 14N50G-TF1-T | CEM0410 | CEN2321A | 14N50L-TA3-T | BRCS120P012MC
Keywords - BRCS080N10SHBD MOSFET datasheet
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History: CEM9436A | IXFT23N80Q | 14N50G-TF1-T | CEM0410 | CEN2321A | 14N50L-TA3-T | BRCS120P012MC



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