BRCS080N10SHDP
MOSFET. Datasheet pdf. Equivalent
Type Designator: BRCS080N10SHDP
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 75
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 68
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 25
nC
trⓘ - Rise Time: 3
nS
Cossⓘ -
Output Capacitance: 1250
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008
Ohm
Package:
TO-252
BRCS080N10SHDP
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BRCS080N10SHDP
Datasheet (PDF)
..1. Size:1154K blue-rocket-elect
brcs080n10shdp.pdf 
BRCS080N10SHDP Rev.A Jul.-2022 DATA SHEET / Descriptions TO-252 N N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching, HF Product. / Applications DC
2.1. Size:966K blue-rocket-elect
brcs080n10shzc.pdf
BRCS080N10SHZC Rev.A Sep.-2021 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package . / Features Low RDS(ON) to minimize conductive loss, low Gate Charge for fast switching, Low Thermal resistance
2.2. Size:1960K blue-rocket-elect
brcs080n10shra.pdf
BRCS080N10SHRA Rev.B Sep.-2022 DATA SHEET / Descriptions TO-220 N N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , Ultra Low On-Resistance,fast switching. / Applications PFC . These de
2.3. Size:1834K blue-rocket-elect
brcs080n10shbd.pdf
BRCS080N10SHBD Rev.A Sep.-2022 DATA SHEET / Descriptions TO-263 N N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features ,, Ultra Low On-Resistance,fast switching,HF product. / Applications PFC
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.
