All MOSFET. BRCS100N10SHZC Datasheet

 

BRCS100N10SHZC Datasheet and Replacement


   Type Designator: BRCS100N10SHZC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 62.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 25 nC
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 960 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: PDFN5X6
 

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BRCS100N10SHZC Datasheet (PDF)

 ..1. Size:1622K  blue-rocket-elect
 brcs100n10shzc.pdf pdf_icon

BRCS100N10SHZC

BRCS100N10SHZC Rev.B Jun.-2023 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package . / Features V (V) = 100V I =62.5A (V = 20V) DS D GS RDS(ON)@10V10mR(Typ.8.9mR) HF Product. / Applications High Frequency Switching and Synchronous Recti

 6.1. Size:856K  blue-rocket-elect
 brcs100n06bd.pdf pdf_icon

BRCS100N10SHZC

BRCS100N06BD Rev.A May.-2019 DATA SHEET / Descriptions N TO-263 N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficie

 6.2. Size:809K  blue-rocket-elect
 brcs100n03bd.pdf pdf_icon

BRCS100N10SHZC

BRCS100N03BD Rev.B May.-2022 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features ,, Low gate charge, low crss, fast switching,HF Product. / Applications DC/DC These devices ar

 6.3. Size:1968K  blue-rocket-elect
 brcs100n06ra.pdf pdf_icon

BRCS100N10SHZC

BRCS100N06RA Rev.C Jul.-2018 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high effic

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History: AOUS66616

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