BRCS120N03YB Specs and Replacement
Type Designator: BRCS120N03YB
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 15.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.5 nS
Cossⓘ - Output Capacitance: 26 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: PDFN3X3A-8L
BRCS120N03YB substitution
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BRCS120N03YB datasheet
brcs120n03ya.pdf
BRCS120N03YA Rev.A May.-2022 DATA SHEET / Descriptions PDFN3 3-8L N MOS Double N-CHANNEL MOSFET in a PDFN3 3-8L Plastic Package. / Features VDS (V) = 30V ID =24A (VGS = 20V) RDS(ON)@10V 13mR(Typ.11mR) HF Product. / Applications Intended for use in g... See More ⇒
brcs120n03zb.pdf
BRCS120N03ZB Rev.C Mar.-2022 DATA SHEET / Descriptions DFN 3 3A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN 3 3A-8L Plastic Package. / Features VDS (V) = 30V ID = 20 A (VGS = 20V) RDS(ON)@10V 13mR(Typ.11mR) HF Product. / Applications ... See More ⇒
Detailed specifications: BRCS100N06BD, BRCS100N06DP, BRCS100N06RA, BRCS100N10SHZC, BRCS10N60AA, BRCS120N02LZJ, BRCS120N03DP, BRCS120N03YA, IRF1405, BRCS120N03ZB, BRCS120N06HA, BRCS120N06SRA, BRCS120N06SYM, BRCS120N06YB, BRCS120N10SZC, BRCS120P012MC, BRCS120P012ZJ
Keywords - BRCS120N03YB MOSFET specs
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