BRCS120N03YB Datasheet and Replacement
Type Designator: BRCS120N03YB
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 15.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3.5 nS
Cossⓘ - Output Capacitance: 26 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: PDFN3X3A-8L
BRCS120N03YB substitution
BRCS120N03YB Datasheet (PDF)
brcs120n03yb.pdf

BRCS120N03YB Rev.A Mar.-2022 DATA SHEET / Descriptions PDFN33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a PDFN 33A-8L Plastic Package. / Features VDS (V) = 30V ID =20 A (VGS = 20V) RDS(ON)@10V13mR(Typ.11mR) HFProduct. / Applications DC/DC
brcs120n03ya.pdf

BRCS120N03YA Rev.A May.-2022 DATA SHEET / Descriptions PDFN33-8L N MOS DoubleN-CHANNELMOSFETinaPDFN33-8LPlasticPackage. / Features VDS (V) = 30V ID =24A (VGS =20V) RDS(ON)@10V13mR(Typ.11mR) HFProduct. / Applications Intendedforuseing
brcs120n03zj.pdf

BRCS120N03ZJRev.B Sep.-2020 DATA SHEET / DescriptionsDFN 2*2B-6L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN 2*2B-6L Plastic Package. / FeaturesV (V) = 30VDSI = 8 A (V = 20V)D GSHF Product. / ApplicationsDC/DC
brcs120n03zb.pdf

BRCS120N03ZB Rev.C Mar.-2022 DATA SHEET / Descriptions DFN 33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN 33A-8L Plastic Package. / Features VDS (V) = 30V ID = 20 A (VGS =20V) RDS(ON)@10V13mR(Typ.11mR) HF Product. / Applications
Datasheet: BRCS100N06BD , BRCS100N06DP , BRCS100N06RA , BRCS100N10SHZC , BRCS10N60AA , BRCS120N02LZJ , BRCS120N03DP , BRCS120N03YA , NCEP15T14 , BRCS120N03ZB , BRCS120N06HA , BRCS120N06SRA , BRCS120N06SYM , BRCS120N06YB , BRCS120N10SZC , BRCS120P012MC , BRCS120P012ZJ .
Keywords - BRCS120N03YB MOSFET datasheet
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