BRCS120N03YB Specs and Replacement

Type Designator: BRCS120N03YB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 15.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.5 nS

Cossⓘ - Output Capacitance: 26 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: PDFN3X3A-8L

BRCS120N03YB substitution

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BRCS120N03YB datasheet

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BRCS120N03YB

BRCS120N03YA Rev.A May.-2022 DATA SHEET / Descriptions PDFN3 3-8L N MOS Double N-CHANNEL MOSFET in a PDFN3 3-8L Plastic Package. / Features VDS (V) = 30V ID =24A (VGS = 20V) RDS(ON)@10V 13mR(Typ.11mR) HF Product. / Applications Intended for use in g... See More ⇒

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BRCS120N03YB

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BRCS120N03YB

BRCS120N03ZB Rev.C Mar.-2022 DATA SHEET / Descriptions DFN 3 3A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN 3 3A-8L Plastic Package. / Features VDS (V) = 30V ID = 20 A (VGS = 20V) RDS(ON)@10V 13mR(Typ.11mR) HF Product. / Applications ... See More ⇒

Detailed specifications: BRCS100N06BD, BRCS100N06DP, BRCS100N06RA, BRCS100N10SHZC, BRCS10N60AA, BRCS120N02LZJ, BRCS120N03DP, BRCS120N03YA, IRF1405, BRCS120N03ZB, BRCS120N06HA, BRCS120N06SRA, BRCS120N06SYM, BRCS120N06YB, BRCS120N10SZC, BRCS120P012MC, BRCS120P012ZJ

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