BRCS120P03YB Datasheet and Replacement
Type Designator: BRCS120P03YB
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7.5 nS
Cossⓘ - Output Capacitance: 340 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: PDFN3X3A-8L
BRCS120P03YB substitution
BRCS120P03YB Datasheet (PDF)
brcs120p03yb.pdf
BRCS120P03YB Rev.A Dec.-2021 DATA SHEET / Descriptions PDFN33A-8L P MOS P-Channel Enhancement Mode Field Effect Transistor in a PDFN33A-8L Plastic Package. / Features VDS (V) = -30V ID =-35 A (VGS = 20V) RDS(ON)@10V12mR(Typ.10mR) HFProduct. / Applications DC/DC
brcs120p03zc.pdf
BRCS120P03ZC Rev.A Dec.-2021 DATA SHEET / Descriptions PDFN56 P P-Channel MOSFET in a PDFN56 Plastic Package. / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance. / Applica
brcs120p012zj.pdf
BRCS120P012ZJ Rev.B Dec.-2021 DATA SHEET / Descriptions DFN 2*2B-6L P MOS P-Channel Enhancement Mode Field Effect Transistor in a DFN 2*2B-6L Plastic Package. / Features VDS (V) = -12V ID = -8 A (VGS = 10V) HF Product. / Applications Power
brcs120p04zc.pdf
BRCS120P04ZC Rev.A Jul.-2022 DATA SHEET / Descriptions PDFN56 P P-Channel MOSFET in a PDFN56 Plastic Package. / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance; H
Datasheet: BRCS120N03ZB , BRCS120N06HA , BRCS120N06SRA , BRCS120N06SYM , BRCS120N06YB , BRCS120N10SZC , BRCS120P012MC , BRCS120P012ZJ , K2611 , BRCS120P03ZC , BRCS120P04DP , BRCS120P04YB , BRCS120P04ZC , BRCS12N65BD , BRCS140P03YB , BRCS150C016YN , BRCS150C02YA .
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