BRCS120P04DP
MOSFET. Datasheet pdf. Equivalent
Type Designator: BRCS120P04DP
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 62.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 50
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 43
nC
trⓘ - Rise Time: 20
nS
Cossⓘ -
Output Capacitance: 2800
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02
Ohm
Package:
TO-252
BRCS120P04DP
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BRCS120P04DP
Datasheet (PDF)
..1. Size:1059K blue-rocket-elect
brcs120p04dp.pdf
BRCS120P04DP Rev.A Aug.-2022 DATA SHEET / Descriptions TO-252 P MOS P-CHANNEL MOSFET in a TO-252 Plastic Package. / Features Low On-Resistance, fast switching,HF Product. / Applications DC/DC Power Management of Industrial DC/DC Converter.
4.1. Size:1550K blue-rocket-elect
brcs120p04zc.pdf
BRCS120P04ZC Rev.A Jul.-2022 DATA SHEET / Descriptions PDFN56 P P-Channel MOSFET in a PDFN56 Plastic Package. / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance; H
4.2. Size:1734K blue-rocket-elect
brcs120p04yb.pdf
BRCS120P04YB Rev.A Dec.-2022 DATA SHEET / Descriptions PDFN 33A-8L P MOS P-Channel Enhancement Mode Field Effect Transistor in a PDFN 33A-8L Plastic Package. / Features V (V) = -40V DSI =-41A (V = 20V) D GS RDS(ON)@-10V13.5mR(Typ.11.6mR) HF Product. / Applications
5.1. Size:643K blue-rocket-elect
brcs120p012zj.pdf
BRCS120P012ZJ Rev.B Dec.-2021 DATA SHEET / Descriptions DFN 2*2B-6L P MOS P-Channel Enhancement Mode Field Effect Transistor in a DFN 2*2B-6L Plastic Package. / Features VDS (V) = -12V ID = -8 A (VGS = 10V) HF Product. / Applications Power
5.2. Size:2244K blue-rocket-elect
brcs120p03yb.pdf
BRCS120P03YB Rev.A Dec.-2021 DATA SHEET / Descriptions PDFN33A-8L P MOS P-Channel Enhancement Mode Field Effect Transistor in a PDFN33A-8L Plastic Package. / Features VDS (V) = -30V ID =-35 A (VGS = 20V) RDS(ON)@10V12mR(Typ.10mR) HFProduct. / Applications DC/DC
5.3. Size:1263K blue-rocket-elect
brcs120p03zc.pdf
BRCS120P03ZC Rev.A Dec.-2021 DATA SHEET / Descriptions PDFN56 P P-Channel MOSFET in a PDFN56 Plastic Package. / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance. / Applica
5.4. Size:683K blue-rocket-elect
brcs120p012mc.pdf
BRCS120P012MC Rev.A Sep.-2020 DATA SHEET / Descriptions SOT23-3 P MOS P- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features VDS (V) = -12V ID = -6 A (VGS = 10V) HF Product. / Applications Power Management in Notebook computer, Portable Eq
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