Справочник MOSFET. BRCS120P04DP

 

BRCS120P04DP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BRCS120P04DP
   Тип транзистора: MOSFET
   Полярность: P
   Максимальная рассеиваемая мощность (Pd): 62.5 W
   Предельно допустимое напряжение сток-исток |Uds|: 40 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 2.5 V
   Максимально допустимый постоянный ток стока |Id|: 50 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 43 nC
   Время нарастания (tr): 20 ns
   Выходная емкость (Cd): 2800 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.02 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для BRCS120P04DP

 

 

BRCS120P04DP Datasheet (PDF)

 ..1. Size:1059K  blue-rocket-elect
 brcs120p04dp.pdf

BRCS120P04DP BRCS120P04DP

BRCS120P04DP Rev.A Aug.-2022 DATA SHEET / Descriptions TO-252 P MOS P-CHANNEL MOSFET in a TO-252 Plastic Package. / Features Low On-Resistance, fast switching,HF Product. / Applications DC/DC Power Management of Industrial DC/DC Converter.

 4.1. Size:1550K  blue-rocket-elect
 brcs120p04zc.pdf

BRCS120P04DP BRCS120P04DP

BRCS120P04ZC Rev.A Jul.-2022 DATA SHEET / Descriptions PDFN56 P P-Channel MOSFET in a PDFN56 Plastic Package. / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance; H

 4.2. Size:1734K  blue-rocket-elect
 brcs120p04yb.pdf

BRCS120P04DP BRCS120P04DP

BRCS120P04YB Rev.A Dec.-2022 DATA SHEET / Descriptions PDFN 33A-8L P MOS P-Channel Enhancement Mode Field Effect Transistor in a PDFN 33A-8L Plastic Package. / Features V (V) = -40V DSI =-41A (V = 20V) D GS RDS(ON)@-10V13.5mR(Typ.11.6mR) HF Product. / Applications

 5.1. Size:643K  blue-rocket-elect
 brcs120p012zj.pdf

BRCS120P04DP BRCS120P04DP

BRCS120P012ZJ Rev.B Dec.-2021 DATA SHEET / Descriptions DFN 2*2B-6L P MOS P-Channel Enhancement Mode Field Effect Transistor in a DFN 2*2B-6L Plastic Package. / Features VDS (V) = -12V ID = -8 A (VGS = 10V) HF Product. / Applications Power

 5.2. Size:2244K  blue-rocket-elect
 brcs120p03yb.pdf

BRCS120P04DP BRCS120P04DP

BRCS120P03YB Rev.A Dec.-2021 DATA SHEET / Descriptions PDFN33A-8L P MOS P-Channel Enhancement Mode Field Effect Transistor in a PDFN33A-8L Plastic Package. / Features VDS (V) = -30V ID =-35 A (VGS = 20V) RDS(ON)@10V12mR(Typ.10mR) HFProduct. / Applications DC/DC

 5.3. Size:1263K  blue-rocket-elect
 brcs120p03zc.pdf

BRCS120P04DP BRCS120P04DP

BRCS120P03ZC Rev.A Dec.-2021 DATA SHEET / Descriptions PDFN56 P P-Channel MOSFET in a PDFN56 Plastic Package. / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance. / Applica

 5.4. Size:683K  blue-rocket-elect
 brcs120p012mc.pdf

BRCS120P04DP BRCS120P04DP

BRCS120P012MC Rev.A Sep.-2020 DATA SHEET / Descriptions SOT23-3 P MOS P- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features VDS (V) = -12V ID = -6 A (VGS = 10V) HF Product. / Applications Power Management in Notebook computer, Portable Eq

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