BRCS150P02ZJ
MOSFET. Datasheet pdf. Equivalent
Type Designator: BRCS150P02ZJ
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 11
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 12.7
nC
trⓘ - Rise Time: 25
nS
Cossⓘ -
Output Capacitance: 205
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025
Ohm
Package: DFN2X2B-6L
BRCS150P02ZJ
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BRCS150P02ZJ
Datasheet (PDF)
..1. Size:966K blue-rocket-elect
brcs150p02zj.pdf 
BRCS150P02ZJ Rev.A Apr.-2022 DATA SHEET / Descriptions DFN 22B-6L P MOS P-Channel Enhancement Mode Field Effect Transistor in a DFN 22B-6L Plastic Package. / Features VDS (V) = -20V ID = -11A RDS(ON)@-4.5V17m(Type.15m) HF Product. / Applications
4.1. Size:1521K blue-rocket-elect
brcs150p02mc.pdf
BRCS150P02MC Rev.B Mar.-2023 DATA SHEET / Descriptions SOT23-3 P MOS P- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features V (V) = -20V DSI = -7.0A DRDS(ON)@-4.5V17m(Type.15m) HF Product. / Applications Power Management in
5.1. Size:1090K blue-rocket-elect
brcs150p04sc.pdf
BRCS150P04SCRev.A May.-2020 DATA SHEET / DescriptionsSOP-8 P P-Channel Enhancement Mode Field Effect Transistor in a SOP-8 Plastic Package. / FeaturesV (V) = -40VDSI = -10 A (V =20V)D GSR
5.2. Size:1067K blue-rocket-elect
brcs150p04dp.pdf
BRCS150P04DP Rev.A Mar.-2022 DATA SHEET / Descriptions TO-252 P P-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching, Trench Technologies. HF Product. / Applications
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