BRCS150P04DP MOSFET. Datasheet pdf. Equivalent
Type Designator: BRCS150P04DP
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 40 A
Qgⓘ - Total Gate Charge: 42 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 1150 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TO-252
BRCS150P04DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BRCS150P04DP Datasheet (PDF)
brcs150p04dp.pdf
BRCS150P04DP Rev.A Mar.-2022 DATA SHEET / Descriptions TO-252 P P-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching, Trench Technologies. HF Product. / Applications
brcs150p04sc.pdf
BRCS150P04SCRev.A May.-2020 DATA SHEET / DescriptionsSOP-8 P P-Channel Enhancement Mode Field Effect Transistor in a SOP-8 Plastic Package. / FeaturesV (V) = -40VDSI = -10 A (V =20V)D GSR
brcs150p02mc.pdf
BRCS150P02MC Rev.B Mar.-2023 DATA SHEET / Descriptions SOT23-3 P MOS P- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features V (V) = -20V DSI = -7.0A DRDS(ON)@-4.5V17m(Type.15m) HF Product. / Applications Power Management in
brcs150p02zj.pdf
BRCS150P02ZJ Rev.A Apr.-2022 DATA SHEET / Descriptions DFN 22B-6L P MOS P-Channel Enhancement Mode Field Effect Transistor in a DFN 22B-6L Plastic Package. / Features VDS (V) = -20V ID = -11A RDS(ON)@-4.5V17m(Type.15m) HF Product. / Applications
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: AOTF7T60 | CEB07N65
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