All MOSFET. FQP50N06 Datasheet

 

FQP50N06 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQP50N06

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 120 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 50 A

Maximum Junction Temperature (Tj): 175 °C

Maximum Drain-Source On-State Resistance (Rds): 0.022 Ohm

Package: TO220

FQP50N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQP50N06 Datasheet (PDF)

1.1. fqp50n06l.pdf Size:694K _fairchild_semi

FQP50N06
FQP50N06

May 2001 TM QFET FQP50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 52.4A, 60V, RDS(on) = 0.021? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 24.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 90 pF) This advanced technology has been especially tailored to •

1.2. fqp50n06.pdf Size:644K _fairchild_semi

FQP50N06
FQP50N06

TM QFET FQP50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 31 nC) planar stripe, DMOS technology. • Low Crss ( typical 65 pF) This advanced technology has been especially tailored to • Fast

 

Datasheet: FQD17P06 , FQD18N20V2 , MTD3055VL , FQD19N10 , FQA24N50 , FQD19N10L , FQP6N70 , FQD1N60C , IRF9530 , FQD1N80 , FQA28N50 , FQD20N06 , FQD2N100 , FQD2N60C , FQPF3N25 , FQD2N80 , FQP4N20L .

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