Справочник MOSFET. FQP50N06

 

FQP50N06 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQP50N06
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 120 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   Qg ⓘ - Общий заряд затвора: 31 nC
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.022 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для FQP50N06

   - подбор ⓘ MOSFET транзистора по параметрам

 

FQP50N06 Datasheet (PDF)

 ..1. Size:644K  fairchild semi
 fqp50n06.pdf pdf_icon

FQP50N06

TMQFETFQP50N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 50A, 60V, RDS(on) = 0.022 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 65 pF)This advanced technology has been especially tailored to Fast

 ..2. Size:645K  onsemi
 fqp50n06.pdf pdf_icon

FQP50N06

TMQFETFQP50N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 50A, 60V, RDS(on) = 0.022 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 65 pF)This advanced technology has been especially tailored to Fast

 ..3. Size:231K  inchange semiconductor
 fqp50n06.pdf pdf_icon

FQP50N06

isc N-Channel MOSFET Transistor FQP50N06DESCRIPTIONDrain Current I =50A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 22m(Max)DS(on)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current , high speed switchingSwitch mode power supplies

 0.1. Size:694K  fairchild semi
 fqp50n06l.pdf pdf_icon

FQP50N06

May 2001TMQFETFQP50N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 52.4A, 60V, RDS(on) = 0.021 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 24.5 nC)planar stripe, DMOS technology. Low Crss ( typical 90 pF)This advanced technology has been especially t

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Другие MOSFET... FQD17P06 , FQD18N20V2 , MTD3055VL , FQD19N10 , FQA24N50 , FQD19N10L , FQP6N70 , FQD1N60C , 5N65 , FQD1N80 , FQA28N50 , FQD20N06 , FQD2N100 , FQD2N60C , FQPF3N25 , FQD2N80 , FQP4N20L .

History: SCH1330

 

 
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