BRCS200P03DSC MOSFET Datasheet: P-Ch, 30V, 7.1A. Full specification with pinout and replacement list

BRCS200P03DSC Specs and Replacement

Type Designator: BRCS200P03DSC

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.6 nS

Cossⓘ - Output Capacitance: 580 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: SOP-8

BRCS200P03DSC substitution

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BRCS200P03DSC datasheet

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BRCS200P03DSC Rev.A Mar.-2023 DATA SHEET / Descriptions SOP-8 P Dual P-CHANNEL MOSFET in a SOP-8 Plastic Package . / Features Dual P-CHANNEL VDS(V)=-30V ID=-7.1A RDS(ON)... See More ⇒

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BRCS200P03ZC Rev.A May.-2022 DATA SHEET / Descriptions PDFN5 6 P P-Channel MOSFET in a PDFN5 6 Plastic Package. / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance;HF P... See More ⇒

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BRCS200P03ZB Rev.A May.-2020 DATA SHEET / Descriptions DFN 3 3A-8L P MOS P-Channel Enhancement Mode Field Effect Transistor in a DFN 3 3A-8L Plastic Package. / Features VDS (V) = -30V ID = -19 A (VGS = -20V) HF Product. / Applications Power... See More ⇒