BRCS200P03ZB Datasheet and Replacement
Type Designator: BRCS200P03ZB
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 13 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 19 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5.5 nS
Cossⓘ - Output Capacitance: 550 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: PDFN3X3A-8L
BRCS200P03ZB substitution
BRCS200P03ZB Datasheet (PDF)
brcs200p03zb.pdf
BRCS200P03ZB Rev.A May.-2020 DATA SHEET / Descriptions DFN 33A-8L P MOS P-Channel Enhancement Mode Field Effect Transistor in a DFN 33A-8L Plastic Package. / Features VDS (V) = -30V ID = -19 A (VGS = -20V) HF Product. / Applications Power
brcs200p03zc.pdf
BRCS200P03ZC Rev.A May.-2022 DATA SHEET / Descriptions PDFN56 P P-Channel MOSFET in a PDFN56 Plastic Package. / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance;HF P
brcs200p03zj.pdf
BRCS200P03ZJ Rev.A Sep.-2023 DATA SHEET / Descriptions DFN22B-6L P MOS P-Channel Enhancement Mode Field Effect Transistor in a DFN22B-6L Plastic Package. / Features V (V)=-30V I =-7.8A DS DR
brcs200p03dsc.pdf
BRCS200P03DSC Rev.A Mar.-2023 DATA SHEET / Descriptions SOP-8 P Dual P-CHANNEL MOSFET in a SOP-8 Plastic Package . / Features Dual P-CHANNEL VDS(V)=-30V ID=-7.1A RDS(ON)
Datasheet: BRCS200P012MF , BRCS200P012ZJ , BRCS200P02MC , BRCS200P02YA , BRCS200P02ZJ , BRCS200P03DP , BRCS200P03DSC , BRCS200P03YB , IRLZ44N , BRCS200P03ZC , BRCS200P03ZJ , BRCS20N03IP , BRCS20N06DP , BRCS20N06IP , BRCS20P03IP , BRCS20P06IP , BRCS2300MA .
History: BRCS200N04ZB | PPMT32V4 | BRCS200N04YA
Keywords - BRCS200P03ZB MOSFET datasheet
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History: BRCS200N04ZB | PPMT32V4 | BRCS200N04YA
 
 
 
 
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