BRCS250N10SIP Specs and Replacement
Type Designator: BRCS250N10SIP
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 68 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 37 A
Electrical Characteristics
tr ⓘ - Rise Time: 3.2 nS
Cossⓘ - Output Capacitance: 475 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: TO-251
BRCS250N10SIP substitution
- MOSFET ⓘ Cross-Reference Search
BRCS250N10SIP datasheet
brcs250n10sip.pdf
BRCS250N10SIP Rev.A Oct.-2023 DATA SHEET / Descriptions TO-251 N N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features V (V) = 100V I =37A (V = 20V) DS D GS R DS(ON)@10V 25mR(Typ.20mR) R DS(ON)@4.5V 35mR(Typ.25mR) HF Product. / Applications LED ... See More ⇒
brcs250n10sdp.pdf
BRCS250N10SDP Rev.A Jun.-2023 DATA SHEET / Descriptions TO-252 N N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features V (V) = 100V I =37A (V = 20V) DS D GS R DS(ON)@10V 25mR(Typ.20mR) R DS(ON)@4.5V 35mR(Typ.25mR) HF Product. / Applications LED ... See More ⇒
Detailed specifications: BRCS2321MA, BRCS2321MC, BRCS250C03MF, BRCS250C03YA, BRCS250N03DMF, BRCS250N03DSC, BRCS250N03YA, BRCS250N10SDP, IRF530, BRCS250N10SYB, BRCS25N60PH, BRCS26N50PA, BRCS26N50PH, BRCS2C5N08EMA, BRCS2N65AA, BRCS2N65IP, BRCS2N65QF
Keywords - BRCS250N10SIP MOSFET specs
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