BRCS900N10SYM Datasheet and Replacement
Type Designator: BRCS900N10SYM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 35.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id| ⓘ - Maximum Drain Current: 13.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 6.5 nC
tr ⓘ - Rise Time: 2 nS
Cossⓘ - Output Capacitance: 105 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: PDFN5X6A
BRCS900N10SYM substitution
BRCS900N10SYM Datasheet (PDF)
brcs900n10sym.pdf

BRCS900N10SYM Rev.C Feb.-2023 DATA SHEET / Descriptions PDFN56A N Dual N-CHANNEL MOSFET in a PDFN56A Plastic Package. / Features Dual N-Ch VDS(V)=100V ID=13.7A RDS(ON)
brcs900p10dp.pdf

BRCS900P10DP Rev.A Aug.-2023 DATA SHEET / Descriptions TO-252 P MOS P-CHANNEL MOSFET in a TO-252 Plastic Package. / Features VDS(V)=-100V ID=-18A RDS(ON)@-10V
brcs90p03dp.pdf

BRCS90P03DP Rev.A .May.-2019 DATA SHEET / Descriptions TO-252 P P-CHANNEL MOSFET in a TO-252 Plastic Package. / Features Lowgatecharge,lowcrss,fastswitching. Halogen-free Product. / Applications DC/DC These d
brcs90p03ra.pdf

BRCS90P03RA Rev.B .Jul.-2018 DATA SHEET / Descriptions TO-220 P MOS P-CHANNEL MOSFET in a TO-220 Plastic Package. / Features Lowgatecharge,lowcrss,fastswitching. / Applications DC/DC These devices are well suited for hig
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRF1405 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: IXFK80N15Q | FMR19N60E | IRFP460P
Keywords - BRCS900N10SYM MOSFET datasheet
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History: IXFK80N15Q | FMR19N60E | IRFP460P



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