BRCS900N10SYM MOSFET Datasheet: N-Ch, 100V, 13.7A. Full specification with pinout and replacement list

BRCS900N10SYM Specs and Replacement

Type Designator: BRCS900N10SYM

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: PDFN5X6A

BRCS900N10SYM substitution

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Detailed specifications: BRCS50N06RA, BRCS5N50YU, BRCS5P06MC, BRCS5P06MF, BRCS60N02DP, BRCS630FA, BRCS700P10DP, BRCS800P06SC, IRF540N, BRCS900P10DP, BRCS90P03DP, BRCS9N20YU, BRD4N65S, BRD5N20, BRD5N65, BRD640, BRD65R1K0C