BRCS900N10SYM Datasheet and Replacement
Type Designator: BRCS900N10SYM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 35.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 2 nS
Cossⓘ - Output Capacitance: 105 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: PDFN5X6A
BRCS900N10SYM substitution
BRCS900N10SYM Datasheet (PDF)
brcs900n10sym.pdf
BRCS900N10SYM Rev.C Feb.-2023 DATA SHEET / Descriptions PDFN56A N Dual N-CHANNEL MOSFET in a PDFN56A Plastic Package. / Features Dual N-Ch VDS(V)=100V ID=13.7A RDS(ON)
brcs900p10dp.pdf
BRCS900P10DP Rev.A Aug.-2023 DATA SHEET / Descriptions TO-252 P MOS P-CHANNEL MOSFET in a TO-252 Plastic Package. / Features VDS(V)=-100V ID=-18A RDS(ON)@-10V
brcs90p03dp.pdf
BRCS90P03DP Rev.A .May.-2019 DATA SHEET / Descriptions TO-252 P P-CHANNEL MOSFET in a TO-252 Plastic Package. / Features Lowgatecharge,lowcrss,fastswitching. Halogen-free Product. / Applications DC/DC These d
brcs90p03ra.pdf
BRCS90P03RA Rev.B .Jul.-2018 DATA SHEET / Descriptions TO-220 P MOS P-CHANNEL MOSFET in a TO-220 Plastic Package. / Features Lowgatecharge,lowcrss,fastswitching. / Applications DC/DC These devices are well suited for hig
Datasheet: BRCS50N06RA , BRCS5N50YU , BRCS5P06MC , BRCS5P06MF , BRCS60N02DP , BRCS630FA , BRCS700P10DP , BRCS800P06SC , IRF540N , BRCS900P10DP , BRCS90P03DP , BRCS9N20YU , BRD4N65S , BRD5N20 , BRD5N65 , BRD640 , BRD65R1K0C .
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History: SL40P05Y | SGSP201
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