BRCS900P10DP MOSFET. Datasheet pdf. Equivalent
Type Designator: BRCS900P10DP
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 65 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 5.9 nC
trⓘ - Rise Time: 2.4 nS
Cossⓘ - Output Capacitance: 750 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TO-252
BRCS900P10DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BRCS900P10DP Datasheet (PDF)
brcs900p10dp.pdf
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BRCS900P10DP Rev.A Aug.-2023 DATA SHEET / Descriptions TO-252 P MOS P-CHANNEL MOSFET in a TO-252 Plastic Package. / Features VDS(V)=-100V ID=-18A RDS(ON)@-10V
brcs900n10sym.pdf
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BRCS900N10SYM Rev.C Feb.-2023 DATA SHEET / Descriptions PDFN56A N Dual N-CHANNEL MOSFET in a PDFN56A Plastic Package. / Features Dual N-Ch VDS(V)=100V ID=13.7A RDS(ON)
brcs90p03dp.pdf
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BRCS90P03DP Rev.A .May.-2019 DATA SHEET / Descriptions TO-252 P P-CHANNEL MOSFET in a TO-252 Plastic Package. / Features Lowgatecharge,lowcrss,fastswitching. Halogen-free Product. / Applications DC/DC These d
brcs90p03ra.pdf
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BRCS90P03RA Rev.B .Jul.-2018 DATA SHEET / Descriptions TO-220 P MOS P-CHANNEL MOSFET in a TO-220 Plastic Package. / Features Lowgatecharge,lowcrss,fastswitching. / Applications DC/DC These devices are well suited for hig
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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