BRD5N20 Datasheet and Replacement
Type Designator: BRD5N20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 4.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 7 nC
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 52 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
Package: TO-252
BRD5N20 substitution
BRD5N20 Datasheet (PDF)
brd5n20.pdf

BRD5N20 Rev.D Nov.-2015 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features 100%Low gate charge, low Rdson, fast switching, Low Reverse transfer capacitances,100% Single Pulse
brd5n50.pdf

BRD5N50Rev.D May.-2016 DATA SHEET / DescriptionsTO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency switching
brd5n60.pdf

BRD5N60(BRCS5N60D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high
brd5n65.pdf

BRD5N65 Rev.A Sep.-2016 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: AP08P20GP-HF | 2N6961 | IRF710S
Keywords - BRD5N20 MOSFET datasheet
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History: AP08P20GP-HF | 2N6961 | IRF710S



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