All MOSFET. BRD640 Datasheet

 

BRD640 Datasheet and Replacement


   Type Designator: BRD640
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 186 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 121 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO-252
 

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BRD640 Datasheet (PDF)

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BRD640

BRD640 Rev.D May.-2016 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency swi

Datasheet: BRCS800P06SC , BRCS900N10SYM , BRCS900P10DP , BRCS90P03DP , BRCS9N20YU , BRD4N65S , BRD5N20 , BRD5N65 , IRFP260N , BRD65R1K0C , BRD65R280C , BRD65R380C , BRD65R600C , BRD65R650C , BRD7002K1 , BRD7002K2 , BRD7N60 .

History: JMSH1010PC | IPP09N03LA

Keywords - BRD640 MOSFET datasheet

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