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BRD640 Specs and Replacement

Type Designator: BRD640

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 186 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 121 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO-252

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BRD640 datasheet

 ..1. Size:1175K  blue-rocket-elect
 brd640.pdf pdf_icon

BRD640

BRD640 Rev.D May.-2016 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency swi... See More ⇒

Detailed specifications: BRCS800P06SC, BRCS900N10SYM, BRCS900P10DP, BRCS90P03DP, BRCS9N20YU, BRD4N65S, BRD5N20, BRD5N65, IRLZ44N, BRD65R1K0C, BRD65R280C, BRD65R380C, BRD65R600C, BRD65R650C, BRD7002K1, BRD7002K2, BRD7N60

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