BRFL4N65S Specs and Replacement
Type Designator: BRFL4N65S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 102 nS
Cossⓘ - Output Capacitance: 44 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
Package: TO-220FL
BRFL4N65S substitution
- MOSFET ⓘ Cross-Reference Search
BRFL4N65S datasheet
brfl4n65s.pdf
BRFL4N65S Rev.A Dec.-2023 DATA SHEET / Descriptions TO-220FL N MOS N-CHANNEL MOSFET in a TO-220FL Plastic Package. / Features Low gate charge, low crss, fast switching,Have good Electromagnetic Interference porformance. / Applications ... See More ⇒
Detailed specifications: BRF65R650C, BRFL10N65S, BRFL12N65S, BRFL13N50, BRFL15N50, BRFL20N50, BRFL20N65, BRFL24N50, K3569, BRFL60R190C, BRFL65R160C, BRFL65R380C, BRFL70R360C, BRFL7N65S, BRFL8N65, BRGN250N65YK, BRI2N70
Keywords - BRFL4N65S MOSFET specs
BRFL4N65S cross reference
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BRFL4N65S replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: SSW90R420S2 | HCD65R2K7
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