BRFL60R190C Specs and Replacement
Type Designator: BRFL60R190C
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 39 nS
Cossⓘ - Output Capacitance: 90 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO-220FL
BRFL60R190C substitution
- MOSFET ⓘ Cross-Reference Search
BRFL60R190C datasheet
brfl60r190c.pdf
BRFL60R190C Rev.A Feb.-2023 DATA SHEET / Descriptions TO-220FL N 600V N-CHANNEL 600V Super-Junction Power MOSFET in a TO-220FL Plastic Package. / Features R Qg 100% ROHS DS(on) Very low R Qg,100%avalanche tested,RoHS compliant,with... See More ⇒
Detailed specifications: BRFL10N65S, BRFL12N65S, BRFL13N50, BRFL15N50, BRFL20N50, BRFL20N65, BRFL24N50, BRFL4N65S, IRFP260, BRFL65R160C, BRFL65R380C, BRFL70R360C, BRFL7N65S, BRFL8N65, BRGN250N65YK, BRI2N70, BRI4N70
Keywords - BRFL60R190C MOSFET specs
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