BRU24N50 Datasheet and Replacement
Type Designator: BRU24N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 270 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5.6 nS
Cossⓘ - Output Capacitance: 311 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: TO-3P
BRU24N50 substitution
BRU24N50 Datasheet (PDF)
bru24n50.pdf

BRU24N50 Rev.A Aug.-2023 DATA SHEET / Descriptions TO-3P N MOS N-Channel MOSFET in a TO-3P Plastic Package. / Features V =500V I =24A DS DRDS(ON)@10V0.25(Typ. 0.17) RDS(ON)@6V0.3(Typ. 0.18m) / Applications
Datasheet: BRI2N70 , BRI4N70 , BRI50N06 , BRI5N65 , BRI65R380C , BRI740 , BRI7N60 , BRI7N65 , 2N7002 , BRU26N50 , BSS123K2 , RU12N65P , RU13N65R , RU15P12C , RU17P12C , RU17P6C , RU18N65P .
History: APM9988QB | NTJS3157NT2 | SVSP7N70DD2TR | 5N70K | 2N80L-TF2-T | FDT3612 | 4N70KG-TM3-T
Keywords - BRU24N50 MOSFET datasheet
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History: APM9988QB | NTJS3157NT2 | SVSP7N70DD2TR | 5N70K | 2N80L-TF2-T | FDT3612 | 4N70KG-TM3-T



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