RU18N65P MOSFET Datasheet: N-Ch, 650V, 18A. Full specification with pinout and replacement list

RU18N65P Specs and Replacement

Type Designator: RU18N65P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 260 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 81 nS

Cossⓘ - Output Capacitance: 410 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: TO220F

RU18N65P substitution

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RU18N65P datasheet

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RU18N65P N-Channel Advanced Power MOSFET Features Pin Description 650V/18A, RDS (ON) =410m (Typ.)@VGS=10V Low Reverse Transfer Ultra Low Gate Charge 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Lead Free and Green Devices Available (RoHS Compliant) GD S TO220F D D D D D Applications D pp D AC/DC Power Conversi... See More ⇒

Detailed specifications: BRU24N50, BRU26N50, BSS123K2, RU12N65P, RU13N65R, RU15P12C, RU17P12C, RU17P6C, IRF1407, RU205C, RU2060L, RU20N65P, RU20N65R, RU20P3C, RU2N65P, RU30110M, RU30120M3