All MOSFET. RU18N65P Datasheet

 

RU18N65P Datasheet and Replacement


   Type Designator: RU18N65P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 260 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 81 nS
   Cossⓘ - Output Capacitance: 410 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: TO220F
 

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RU18N65P Datasheet (PDF)

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RU18N65P

RU18N65PN-Channel Advanced Power MOSFETFeatures Pin Description 650V/18A, RDS (ON) =410m(Typ.)@VGS=10V Low Reverse Transfer Ultra Low Gate Charge 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Lead Free and Green Devices Available (RoHS Compliant)GDSTO220FDDDDDApplications Dpp D AC/DC Power Conversi

Datasheet: BRU24N50 , BRU26N50 , BSS123K2 , RU12N65P , RU13N65R , RU15P12C , RU17P12C , RU17P6C , P0903BDG , RU205C , RU2060L , RU20N65P , RU20N65R , RU20P3C , RU2N65P , RU30110M , RU30120M3 .

History: PSMN4R8-100PSE | HSP0048

Keywords - RU18N65P MOSFET datasheet

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