All MOSFET. RU18N65P Datasheet

 

RU18N65P MOSFET. Datasheet pdf. Equivalent


   Type Designator: RU18N65P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 260 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 128 nC
   trⓘ - Rise Time: 81 nS
   Cossⓘ - Output Capacitance: 410 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: TO220F

 RU18N65P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RU18N65P Datasheet (PDF)

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 ru18n65p.pdf

RU18N65P RU18N65P

RU18N65PN-Channel Advanced Power MOSFETFeatures Pin Description 650V/18A, RDS (ON) =410m(Typ.)@VGS=10V Low Reverse Transfer Ultra Low Gate Charge 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Lead Free and Green Devices Available (RoHS Compliant)GDSTO220FDDDDDApplications Dpp D AC/DC Power Conversi

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

 

 
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