RU205C Specs and Replacement
Type Designator: RU205C
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 51 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: SOT23
RU205C substitution
- MOSFET ⓘ Cross-Reference Search
RU205C datasheet
ru205c.pdf
RU205C N-Channel Advanced Power MOSFET Features Pin Description 20V/5A, RDS (ON) =40m (Typ.)@VGS=4.5V D RDS (ON) =50m (Typ.)@VGS=2.5V Uses Ruichips advanced TrenchTM technology Ultra Low On-Resistance Very Fast Switching V F t S it hi G Low Threshold Voltage Lead Free and Green Devices (RoHS Compliant) S SOT23-3 D D D D D D pp Applications ... See More ⇒
ru205b.pdf
RU205B N-Channel Advanced Power MOSFET MOSFET Features Pin Description 20V/5A, RDS (ON) =30m (Typ.) @ VGS=4.5V RDS (ON) =38m (Typ.) @ VGS=2.5V Low RDS (ON) Super High Dense Cell Design Reliable and Rugged SOT-23 Lead Free and Green Available Applications Load Switch PWM Applications N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Ra... See More ⇒
ru205b.pdf
RU205B www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC Convert... See More ⇒
Detailed specifications: BRU26N50, BSS123K2, RU12N65P, RU13N65R, RU15P12C, RU17P12C, RU17P6C, RU18N65P, 2SK3568, RU2060L, RU20N65P, RU20N65R, RU20P3C, RU2N65P, RU30110M, RU30120M3, RU30180M-C
Keywords - RU205C MOSFET specs
RU205C cross reference
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History: IXTP34N65X2 | STY112N65M5
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