RU20N65R MOSFET Datasheet: N-Ch, 650V, 20A. Full specification with pinout and replacement list

RU20N65R Specs and Replacement

Type Designator: RU20N65R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 83 nS

Cossⓘ - Output Capacitance: 420 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: TO220

RU20N65R substitution

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RU20N65R datasheet

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RU20N65R N-Channel Advanced Power MOSFET Features Pin Description 650V/20A, RDS (ON) =400m (Typ.)@VGS=10V Low Reverse Transfer Ultra Low Gate Charge 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Lead Free and Green Devices Available (RoHS Compliant) G DS TO220 D D D D D Applications D pp D AC/DC Power Conversion i... See More ⇒

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RU20N65P N-Channel Advanced Power MOSFET Features Pin Description 650V/20A, RDS (ON) =400m (Typ.)@VGS=10V Low Reverse Transfer Ultra Low Gate Charge 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Lead Free and Green Devices Available (RoHS Compliant) GD S TO220F D D D D D Applications D pp D AC/DC Power Conversion ... See More ⇒

9.1. Size:925K blue-rocket-elect
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