All MOSFET. RU20N65R Datasheet

 

RU20N65R MOSFET. Datasheet pdf. Equivalent


   Type Designator: RU20N65R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 135 nC
   trⓘ - Rise Time: 83 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: TO220

 RU20N65R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RU20N65R Datasheet (PDF)

 ..1. Size:419K  ruichips
 ru20n65r.pdf

RU20N65R RU20N65R

RU20N65RN-Channel Advanced Power MOSFETFeatures Pin Description 650V/20A, RDS (ON) =400m(Typ.)@VGS=10V Low Reverse Transfer Ultra Low Gate Charge 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Lead Free and Green Devices Available (RoHS Compliant)GDSTO220DDDDDApplications Dpp D AC/DC Power Conversion i

 7.1. Size:459K  ruichips
 ru20n65p.pdf

RU20N65R RU20N65R

RU20N65PN-Channel Advanced Power MOSFETFeatures Pin Description 650V/20A, RDS (ON) =400m(Typ.)@VGS=10V Low Reverse Transfer Ultra Low Gate Charge 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Lead Free and Green Devices Available (RoHS Compliant)GDSTO220FDDDDDApplications Dpp D AC/DC Power Conversion

 9.1. Size:925K  blue-rocket-elect
 bru20n50.pdf

RU20N65R RU20N65R

BRU20N50 Rev.E Sep.-2016 DATA SHEET / Descriptions TO-3P N MOS N-Channel MOSFET in a TO-3P Plastic Package. / Features dv/dt Low gate charge, Fast switching capability, Avalanche energy specified, Improved dv/dt capability. / Applications

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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