RU20N65R Datasheet and Replacement
Type Designator: RU20N65R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 83 nS
Cossⓘ - Output Capacitance: 420 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO220
RU20N65R substitution
RU20N65R Datasheet (PDF)
ru20n65r.pdf

RU20N65RN-Channel Advanced Power MOSFETFeatures Pin Description 650V/20A, RDS (ON) =400m(Typ.)@VGS=10V Low Reverse Transfer Ultra Low Gate Charge 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Lead Free and Green Devices Available (RoHS Compliant)GDSTO220DDDDDApplications Dpp D AC/DC Power Conversion i
ru20n65p.pdf

RU20N65PN-Channel Advanced Power MOSFETFeatures Pin Description 650V/20A, RDS (ON) =400m(Typ.)@VGS=10V Low Reverse Transfer Ultra Low Gate Charge 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Lead Free and Green Devices Available (RoHS Compliant)GDSTO220FDDDDDApplications Dpp D AC/DC Power Conversion
bru20n50.pdf

BRU20N50 Rev.E Sep.-2016 DATA SHEET / Descriptions TO-3P N MOS N-Channel MOSFET in a TO-3P Plastic Package. / Features dv/dt Low gate charge, Fast switching capability, Avalanche energy specified, Improved dv/dt capability. / Applications
Datasheet: RU13N65R , RU15P12C , RU17P12C , RU17P6C , RU18N65P , RU205C , RU2060L , RU20N65P , IRF2807 , RU20P3C , RU2N65P , RU30110M , RU30120M3 , RU30180M-C , RU3030M3 , RU3040M3 , RU3070M3 .
Keywords - RU20N65R MOSFET datasheet
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