RU2N65P PDF and Equivalents Search

 

RU2N65P Specs and Replacement

Type Designator: RU2N65P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 23 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm

Package: TO220F

RU2N65P substitution

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RU2N65P datasheet

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 ru2n65p.pdf pdf_icon

RU2N65P

RU2N65P N-Channel Advanced Power MOSFET Features Pin Description 650V/2A, RDS (ON) =4300m (Typ.)@VGS=10V Low Reverse Transfer Ultra Low Gate Charge 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Lead Free and Green Devices Available (RoHS Compliant) GD S TO220F D D D D D Applications D pp D AC/DC Power Conversion i... See More ⇒

Detailed specifications: RU17P12C, RU17P6C, RU18N65P, RU205C, RU2060L, RU20N65P, RU20N65R, RU20P3C, AO3407, RU30110M, RU30120M3, RU30180M-C, RU3030M3, RU3040M3, RU3070M3, RU30C20M3, RU30C30M

Keywords - RU2N65P MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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