All MOSFET. RU2N65P Datasheet

 

RU2N65P MOSFET. Datasheet pdf. Equivalent


   Type Designator: RU2N65P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 23 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm
   Package: TO220F

 RU2N65P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RU2N65P Datasheet (PDF)

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 ru2n65p.pdf

RU2N65P RU2N65P

RU2N65PN-Channel Advanced Power MOSFETFeatures Pin Description 650V/2A, RDS (ON) =4300m(Typ.)@VGS=10V Low Reverse Transfer Ultra Low Gate Charge 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Lead Free and Green Devices Available (RoHS Compliant)GDSTO220FDDDDDApplications Dpp D AC/DC Power Conversion i

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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