All MOSFET. RU2N65P Datasheet

 

RU2N65P Datasheet and Replacement


   Type Designator: RU2N65P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 23 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 9 nC
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm
   Package: TO220F
 

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RU2N65P Datasheet (PDF)

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RU2N65P

RU2N65PN-Channel Advanced Power MOSFETFeatures Pin Description 650V/2A, RDS (ON) =4300m(Typ.)@VGS=10V Low Reverse Transfer Ultra Low Gate Charge 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Lead Free and Green Devices Available (RoHS Compliant)GDSTO220FDDDDDApplications Dpp D AC/DC Power Conversion i

Datasheet: RU17P12C , RU17P6C , RU18N65P , RU205C , RU2060L , RU20N65P , RU20N65R , RU20P3C , 7N60 , RU30110M , RU30120M3 , RU30180M-C , RU3030M3 , RU3040M3 , RU3070M3 , RU30C20M3 , RU30C30M .

History: TJ100F04M3L

Keywords - RU2N65P MOSFET datasheet

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