RU30110M PDF and Equivalents Search

 

RU30110M Specs and Replacement

Type Designator: RU30110M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 54 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 385 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: DFN5060

RU30110M substitution

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RU30110M datasheet

 ..1. Size:763K  ruichips
ru30110m.pdf pdf_icon

RU30110M

RU30110M N-Channel Advanced Power MOSFET Features Pin Description 30V/110A, RDS (ON) =3.8m (Typ.)@VGS=10V D RDS (ON) =4.6m (Typ.)@VGS=4.5V DD D Uses Ruichips advanced TrenchTM technology Ultra Low On-Resistance G Fast Switching Speed S S 100% avalanche tested S Lead Free and Green Devices (RoHS Compliant) PIN1 DFN5060 D Applications DC/DC Conve... See More ⇒

 9.1. Size:317K  ruichips
ru30120s.pdf pdf_icon

RU30110M

RU30120S N-Channel Advanced Power MOSFET Features Pin Description 30V/120A, RDS (ON) =2.5m (Typ.)@VGS=10V D RDS (ON) =3.3m (Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% Avalanche Tested Lead Free and Green Devices Available (RoHS Compliant) G S TO263 D Applications DC-DC Converters G S N-Channel MOSFET Absolute Maximum ... See More ⇒

 9.2. Size:296K  ruichips
ru30100l.pdf pdf_icon

RU30110M

RU30100L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/100A, RDS (ON) =2.2 m (Typ.)@VGS=10V RDS (ON) =4 m (Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-252 Lead Free and Green Devices Available (RoHS Compliant) Applications High Frequency Synchronous Buck Converters for Computer Proces... See More ⇒

 9.3. Size:276K  ruichips
ru30120l.pdf pdf_icon

RU30110M

RU30120L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/120A, RDS (ON) =2.5m (Typ.) @ VGS=10V RDS (ON) =3.3m (Typ.) @ VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO252 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters N-Channel MOSFET Absolute Maximum Rat... See More ⇒

Detailed specifications: RU17P6C, RU18N65P, RU205C, RU2060L, RU20N65P, RU20N65R, RU20P3C, RU2N65P, 18N50, RU30120M3, RU30180M-C, RU3030M3, RU3040M3, RU3070M3, RU30C20M3, RU30C30M, RU30C40M3

Keywords - RU30110M MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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