RU30110M MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: RU30110M
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 54 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 110 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 52 nC
trⓘ - Время нарастания: 12 ns
Cossⓘ - Выходная емкость: 385 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm
Тип корпуса: DFN5060
RU30110M Datasheet (PDF)
ru30110m.pdf
RU30110MN-Channel Advanced Power MOSFETFeatures Pin Description 30V/110A,RDS (ON) =3.8m(Typ.)@VGS=10VDRDS (ON) =4.6m(Typ.)@VGS=4.5V DDD Uses Ruichips advanced TrenchTM technology Ultra Low On-ResistanceG Fast Switching SpeedSS 100% avalanche testedS Lead Free and Green Devices (RoHS Compliant)PIN1DFN5060DApplications DC/DC Conve
ru30120s.pdf
RU30120SN-Channel Advanced Power MOSFETFeatures Pin Description 30V/120A, RDS (ON) =2.5m(Typ.)@VGS=10VD RDS (ON) =3.3m(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% Avalanche Tested Lead Free and Green Devices Available (RoHS Compliant)GSTO263DApplications DC-DC ConvertersGSN-Channel MOSFETAbsolute Maximum
ru30100l.pdf
RU30100LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/100A,RDS (ON) =2.2 m(Typ.)@VGS=10VRDS (ON) =4 m(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-252 Lead Free and Green Devices Available(RoHS Compliant)Applications High Frequency Synchronous BuckConverters for Computer Proces
ru30120l.pdf
RU30120LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/120A,RDS (ON) =2.5m (Typ.) @ VGS=10VRDS (ON) =3.3m (Typ.) @ VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO252 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC ConvertersN-Channel MOSFETAbsolute Maximum Rat
ru30180m-c.pdf
RU30180M-CN-Channel Advanced Power MOSFETFeatures Pin Description 30V/160A,RDS (ON) =1.4m(Typ.)@VGS=10VRDS (ON) =1.6m(Typ.)@VGS=4.5V Uses Ruichips Proprietary New TrenchTM TechnologyG Ultra Low On-ResistanceSSS 100% Avalanche TestedD Reliable and RuggedD Qualified According to JEDEC CriteriaDDPIN1 Lead Free and Green Devices (RoHS
ru30160r.pdf
RU30160RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/160A,RDS (ON) =2.3m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC ConvertersN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCom
ru30120r.pdf
RU30120RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/120A,RDS (ON) =2.5m (Typ.) @ VGS=10VRDS (ON) =3.3m (Typ.) @ VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC ConvertersN-Channel MOSFETAbsolute Maximum Ra
ru3013h.pdf
RU3013HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/11A,RDS (ON) =16m (Typ.) @ VGS=10VRDS (ON) =24m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green AvailableSOP-8Applications SMPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (TA=25C Unless Othe
ru3010h.pdf
RU3010HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/8A,RDS (ON) =18m (Typ.) @ VGS=10VRDS (ON) =40m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green AvailableSOP-8Applications SMPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (TA=25C Unless Other
ru30100r.pdf
RU30100RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/110A,RDS (ON) =4 m(Typ.)@VGS=10VRDS (ON) =5.5m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters and Off-line UPSN-Channel MOSFETAbsolute Max
ru30105r.pdf
RU30105RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/125A,RDS (ON) =3.2 m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters and Off-line UPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParamete
ru30105l.pdf
RU30105LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/110A,RDS (ON) =3.2 m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-252 Lead Free and Green Devices Available(RoHS Compliant)Applications High Frequency Synchronous BuckConverters for Computer Processor Power DC-DC Converters
ru30120m3.pdf
RU30120M3N-Channel Advanced Power MOSFETFeatures Pin Description 30V/120A,RDS (ON) =1.8m(Typ.)@VGS=10V DDDRDS (ON) =2.3m(Typ.)@VGS=4.5VD Uses Ruichips advanced TrenchTM technology Ultra Low On-ResistanceG Fast Switching SpeedSS 100% avalanche tested S Lead Free and Green Devices (RoHS Compliant)PIN1DFN3030DApplications Fast Ch
ru30140r.pdf
RU30140RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/140A,RDS (ON) =3m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications Switching ApplicationsN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating Unit
ru30160s.pdf
RU30160SN-Channel Advanced Power MOSFETFeatures Pin Description 30V/160A, RDS (ON) =2.3m(Typ.)@VGS=10VD Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GSTO263DApplications DC-DC ConvertersGSN-Channel MOSFETAbsolute Maximum RatingsSymbol Parameter Rating U
ru30106l.pdf
RU30106LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/130A,RDS (ON) =2.5m(Typ.)@VGS=10VRDS (ON) =5m(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-252 Lead Free and Green Devices Available(RoHS Compliant)Applications High Frequency Synchronous BuckConverters for Computer Processo
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918