All MOSFET. RU40C40M Datasheet

 

RU40C40M MOSFET. Datasheet pdf. Equivalent


   Type Designator: RU40C40M
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 18 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: PDFN5060

 RU40C40M Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RU40C40M Datasheet (PDF)

 ..1. Size:379K  ruichips
 ru40c40m.pdf

RU40C40M RU40C40M

RU40C40MComplementary Advanced Power MOSFETFeatures Pin Description N-Channel40V/40A,RDS (ON) =12m(Typ.) @ VGS=10VD2D2RDS (ON) =17m(Typ.) @ VGS=4.5V D1D1 P-Channel-40V/-40A,40V/ 40ARDS (ON) =21m (Typ.) @ VGS=-10VRDS (ON) =30m (Typ.) @ VGS=-4.5VG2 Fast Switching SpeedG1S2pin1S1 ESD Protected Low gate ChargePDFN5060 Lead Free

 7.1. Size:1978K  ruichips
 ru40c40l4.pdf

RU40C40M RU40C40M

RU40C40L4Complementary Advanced Power MOSFETFeatures Pin Description N-ChannelD1/D240V/40A,RDS (ON) =13m(Typ.) @ VGS=10VRDS (ON) =16m(Typ.) @ VGS=4.5V P-Channel-40V/-40A,RDS (ON) =16m (Typ.) @ VGS=-10VRDS (ON) =25m (Typ.) @ VGS=-4.5VS1G1 Fast Switching Speed S2G2 Low gate Charge ESD protectedTO252-4L Lead Free and Green Devices A

 9.1. Size:883K  ruichips
 ru40c20m3.pdf

RU40C40M RU40C40M

RU40C20M3Complementary Advanced Power MOSFETF t Pi D i tiFeatures Pin Description N-Channel40V/20A, G2RDS (ON) =12m(Typ.) @ VGS=10V G1S2S1RDS (ON) =15m(Typ.) @ VGS=4.5V P-Channel-40V/-20A,40V/ 20A,RDS (ON) =35m (Typ.) @ VGS=-10VD2RDS (ON) =43m (Typ.) @ VGS=-4.5VD1D2D1 Uses Ruichips Advanced TrenchTM Technologypin1 Ultra Low On-Resist

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History: SDF10N100JED

 

 
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